退火温度对二氧化锰薄膜的影响:形态、结构和电学性能

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2023-09-04 DOI:10.1109/TSM.2023.3311091

Stacy A. Lynrah;Lim Ying Ying;P. Chinnamuthu

{"title":"退火温度对二氧化锰薄膜的影响:形态、结构和电学性能","authors":"Stacy A. Lynrah;Lim Ying Ying;P. Chinnamuthu","doi":"10.1109/TSM.2023.3311091","DOIUrl":null,"url":null,"abstract":"Deposition of the manganese dioxide (MnO2) Thin Film (TF) was carried out by Electron beam (E-beam) evaporation technique. Structural, optical, and electrical characteristics reveal that MnO2 undergoes a phase transformation due to annealing temperature. Photoluminescence (PL) emission reveals the highest intensities at 500°C, indicating the least density of defects present in the sample. Moreover, the XRD analysis is very much in accordance with the optical and electrical results. The I-V characteristics show a significant enhancement at 500°C, with an improved Ilight/Idark ratio. The barrier height increases with the temperature while decreasing at 500°C due to decreased defects. At 500°C, a least ideality factor of value 1.5 is obtained. If the temperature exceeds 500°C, MnO2 breaks into other oxides like Mn2O3 and Mn3O4. Hence annealing at 500°C is an optimum temperature for better structural, optical, and electrical properties of MnO2 TF, showing great promise for future optoelectronics applications.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"36 4","pages":"666-672"},"PeriodicalIF":2.3000,"publicationDate":"2023-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Annealing Temperature on MnO2 Thin Films: Morphological, Structural, and Electrical Properties\",\"authors\":\"Stacy A. Lynrah;Lim Ying Ying;P. Chinnamuthu\",\"doi\":\"10.1109/TSM.2023.3311091\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deposition of the manganese dioxide (MnO2) Thin Film (TF) was carried out by Electron beam (E-beam) evaporation technique. Structural, optical, and electrical characteristics reveal that MnO2 undergoes a phase transformation due to annealing temperature. Photoluminescence (PL) emission reveals the highest intensities at 500°C, indicating the least density of defects present in the sample. Moreover, the XRD analysis is very much in accordance with the optical and electrical results. The I-V characteristics show a significant enhancement at 500°C, with an improved Ilight/Idark ratio. The barrier height increases with the temperature while decreasing at 500°C due to decreased defects. At 500°C, a least ideality factor of value 1.5 is obtained. If the temperature exceeds 500°C, MnO2 breaks into other oxides like Mn2O3 and Mn3O4. Hence annealing at 500°C is an optimum temperature for better structural, optical, and electrical properties of MnO2 TF, showing great promise for future optoelectronics applications.\",\"PeriodicalId\":451,\"journal\":{\"name\":\"IEEE Transactions on Semiconductor Manufacturing\",\"volume\":\"36 4\",\"pages\":\"666-672\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2023-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Semiconductor Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10238821/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10238821/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

采用电子束蒸发法制备了二氧化锰(MnO2)薄膜。结构、光学和电学特征表明，MnO2在退火温度下发生相变。光致发光(PL)在500°C时显示出最高的强度，表明样品中存在的缺陷密度最小。此外，XRD分析结果与光学和电学结果非常吻合。在500℃温度下，材料的I-V特性显著增强，光/暗比得到改善。势垒高度随温度升高而升高，但在500℃时由于缺陷减少而降低。在500℃时，最小理想系数为1.5。当温度超过500℃时，MnO2分解成其他氧化物，如Mn2O3和Mn3O4。因此，在500°C退火是MnO2 TF更好的结构，光学和电学性能的最佳温度，对未来的光电子应用显示出很大的希望。

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Impact of Annealing Temperature on MnO2 Thin Films: Morphological, Structural, and Electrical Properties

Deposition of the manganese dioxide (MnO2) Thin Film (TF) was carried out by Electron beam (E-beam) evaporation technique. Structural, optical, and electrical characteristics reveal that MnO2 undergoes a phase transformation due to annealing temperature. Photoluminescence (PL) emission reveals the highest intensities at 500°C, indicating the least density of defects present in the sample. Moreover, the XRD analysis is very much in accordance with the optical and electrical results. The I-V characteristics show a significant enhancement at 500°C, with an improved Ilight/Idark ratio. The barrier height increases with the temperature while decreasing at 500°C due to decreased defects. At 500°C, a least ideality factor of value 1.5 is obtained. If the temperature exceeds 500°C, MnO2 breaks into other oxides like Mn2O3 and Mn3O4. Hence annealing at 500°C is an optimum temperature for better structural, optical, and electrical properties of MnO2 TF, showing great promise for future optoelectronics applications.

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.