用于28nm CMOS中PCB级探测攻击的全数字容错运行时检测器

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Mao Li;Yunze Yang;Weifeng He;Sanu K. Mathew;Vivek De;Mingoo Seok
{"title":"用于28nm CMOS中PCB级探测攻击的全数字容错运行时检测器","authors":"Mao Li;Yunze Yang;Weifeng He;Sanu K. Mathew;Vivek De;Mingoo Seok","doi":"10.1109/LSSC.2023.3310266","DOIUrl":null,"url":null,"abstract":"This letter presents the first on-chip detector for monitoring a PCB-level probing attack in 28-nm CMOS based on a time-to-digital converter (TDC). It can detect a probing attempt caused by placing a probe with a loading capacitance as small as 2 pF, encompassing most commercial passive probes. It also does so robustly across 30°C–90°C and 0.8–0.9 V, up to the data rate of 160 Mb/s during runtime. The proposed detector is integrated with a general-purpose digital output cell. It consumes <inline-formula> <tex-math notation=\"LaTeX\">$3910 ~\\mu \\text{m} ^{\\mathrm{ 2}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation=\"LaTeX\">$36.8 ~\\mu \\text{W}$ </tex-math></inline-formula> at 40 Mb/s.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Fully-Digital Variation-Tolerant Runtime Detector for PCB-Level Probing Attack in a 28-nm CMOS\",\"authors\":\"Mao Li;Yunze Yang;Weifeng He;Sanu K. Mathew;Vivek De;Mingoo Seok\",\"doi\":\"10.1109/LSSC.2023.3310266\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents the first on-chip detector for monitoring a PCB-level probing attack in 28-nm CMOS based on a time-to-digital converter (TDC). It can detect a probing attempt caused by placing a probe with a loading capacitance as small as 2 pF, encompassing most commercial passive probes. It also does so robustly across 30°C–90°C and 0.8–0.9 V, up to the data rate of 160 Mb/s during runtime. The proposed detector is integrated with a general-purpose digital output cell. It consumes <inline-formula> <tex-math notation=\\\"LaTeX\\\">$3910 ~\\\\mu \\\\text{m} ^{\\\\mathrm{ 2}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation=\\\"LaTeX\\\">$36.8 ~\\\\mu \\\\text{W}$ </tex-math></inline-formula> at 40 Mb/s.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10234573/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10234573/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

摘要

这封信介绍了第一个基于时间-数字转换器(TDC)的芯片上检测器,用于监测28 nm CMOS中的PCB级探测攻击。它可以检测由放置负载电容小至2pF的探针引起的探测尝试,包括大多数商业无源探针。它在30°C–90°C和0.8–0.9 V范围内也表现强劲,运行时数据速率高达160 Mb/s。所提出的检测器与通用数字输出单元集成在一起。它在40 Mb/s时消耗3910~\mu\text{m}^{\mathrm{2}}$和36.8~\mu\ttext{W}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Fully-Digital Variation-Tolerant Runtime Detector for PCB-Level Probing Attack in a 28-nm CMOS
This letter presents the first on-chip detector for monitoring a PCB-level probing attack in 28-nm CMOS based on a time-to-digital converter (TDC). It can detect a probing attempt caused by placing a probe with a loading capacitance as small as 2 pF, encompassing most commercial passive probes. It also does so robustly across 30°C–90°C and 0.8–0.9 V, up to the data rate of 160 Mb/s during runtime. The proposed detector is integrated with a general-purpose digital output cell. It consumes $3910 ~\mu \text{m} ^{\mathrm{ 2}}$ and $36.8 ~\mu \text{W}$ at 40 Mb/s.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信