亚10微米封装基板电路中的接近光刻技术

Fengtao Wang, Fuhan Liu, Linghua Kong, V. Sundaram, R. Tummala, A. Adibi
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引用次数: 4

摘要

半导体行业的快速变化将继续朝着更高的功能发展,从而导致更高的输入/输出(I/O)计数,推动封装向更高密度的架构发展。在未来两到三年内,区域阵列芯片的I/O间距将降至100 μm以内,外围芯片的I/O间距将降至30 μm以内。这给封装行业提出了一个重要的问题:I/O间距的迅速缩小将如何影响芯片连接的封装基板?答案是低于10微米的铜线技术。佐治亚理工学院封装研究中心对汞i线紫外线光刻技术的局限性进行了理论和实验研究。此外,利用半加性金属化工艺,展示了用于倒装芯片连接的超细铜线布线衬底。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Proximity Lithography in Sub-10 Micron Circuitry for Packaging Substrate
Rapid changes in the semiconductor industry will continue toward higher functionality that leads to higher input/outputs (I/O) counts, pushing packaging towards higher density architectures. In the next two to three years, the I/O pitch will fall within 100 μm for area array die and 30 μm for periphery die. That raises an important question to the packaging industry: How will the rapid shrinkage of the I/O pitch affect the package substrate for chip attaching? The answer is sub-10 micron copper line technology. Theoretical and experimental studies on the limitations of using mercury i-line ultraviolet photolithography have been carried at the Packaging Research Center at Georgia Tech. Furthermore, ultra fine copper line routing substrates are demonstrated for flip chip attaching by using semi-additive metallization process.
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来源期刊
IEEE Transactions on Advanced Packaging
IEEE Transactions on Advanced Packaging 工程技术-材料科学:综合
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