面向三维逻辑电路设计的垂直无结纳米线场效应管电热建模

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Sara Mannaa;Arnaud Poittevin;Cédric Marchand;Damien Deleruyelle;Bastien Deveautour;Alberto Bosio;Ian O’Connor;Chhandak Mukherjee;Yifan Wang;Houssem Rezgui;Marina Deng;Cristell Maneux;Jonas Müller;Sylvain Pelloquin;Konstantinos Moustakas;Guilhem Larrieu
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引用次数: 0

摘要

这项工作为三维逻辑电路设计提供了新的见解,垂直无结纳米线场效应管(VNWFET)考虑了潜在的电热现象。通过多物理场模拟了解了vnwfet中的纳米级热传输,spice兼容的紧凑模型主要通过器件阈值电压的移动来捕获温度和捕获效应。电路级仿真表明,温度变化对功能和性能指标(如能量延迟产品)的影响很大。随后讨论了设计考虑的指导方针,旨在为技术改进提供反馈。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3-D Logic Circuit Design-Oriented Electrothermal Modeling of Vertical Junctionless Nanowire FETs
This work presents new insights into 3-D logic circuit design with vertical junctionless nanowire FETs (VNWFET) accounting for underlying electrothermal phenomena. Aided by the understanding of the nanoscale heat transport in VNWFETs through multiphysics simulations, the SPICE-compatible compact model captures temperature and trapping effects principally through a shift of the device threshold voltage. Circuit-level simulations indicate a strong impact of temperature variation on functionality and figures of merits, such as energy-delay products. Subsequent guidelines for design considerations are discussed that are intended to provide feedback for technology improvements.
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来源期刊
CiteScore
5.00
自引率
4.20%
发文量
11
审稿时长
13 weeks
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