{"title":"微结构共振隧道二极管的尺寸效应","authors":"R.D. Schnell, H. Tews","doi":"10.1016/0038-1101(90)90122-U","DOIUrl":null,"url":null,"abstract":"<div><p>Microstructured resonant tunneling diodes are fabricated based on AlGaAs/GaAs double barrier quantum wells grown by metal organic vapour phase epitaxy on semiinsulating GaAs substrates. The active diode areas were varied between 16 and 100 μm<sup>2</sup>. Diodes with 16 μm<sup>2</sup> size showed a 12% decrease in peak-to-valley current ratio and a 40% decrease in peak current density relative to diodes with sizes above 30 μm<sup>2</sup>. The size effect is explained by surface depletion at the diode sidewalls and by local changes of the external voltage over the diode area. The calculated maximum frequency of oscillation showed no size effect because the increase of the negative differential resistance of the small size diodes is compensated by reduced device capacitance.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"33 11","pages":"Pages 1467-1470"},"PeriodicalIF":1.4000,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0038-1101(90)90122-U","citationCount":"2","resultStr":"{\"title\":\"Size effects in microstructured resonant tunneling diodes\",\"authors\":\"R.D. Schnell, H. Tews\",\"doi\":\"10.1016/0038-1101(90)90122-U\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Microstructured resonant tunneling diodes are fabricated based on AlGaAs/GaAs double barrier quantum wells grown by metal organic vapour phase epitaxy on semiinsulating GaAs substrates. The active diode areas were varied between 16 and 100 μm<sup>2</sup>. Diodes with 16 μm<sup>2</sup> size showed a 12% decrease in peak-to-valley current ratio and a 40% decrease in peak current density relative to diodes with sizes above 30 μm<sup>2</sup>. The size effect is explained by surface depletion at the diode sidewalls and by local changes of the external voltage over the diode area. The calculated maximum frequency of oscillation showed no size effect because the increase of the negative differential resistance of the small size diodes is compensated by reduced device capacitance.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"33 11\",\"pages\":\"Pages 1467-1470\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"1990-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0038-1101(90)90122-U\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/003811019090122U\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/003811019090122U","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Size effects in microstructured resonant tunneling diodes
Microstructured resonant tunneling diodes are fabricated based on AlGaAs/GaAs double barrier quantum wells grown by metal organic vapour phase epitaxy on semiinsulating GaAs substrates. The active diode areas were varied between 16 and 100 μm2. Diodes with 16 μm2 size showed a 12% decrease in peak-to-valley current ratio and a 40% decrease in peak current density relative to diodes with sizes above 30 μm2. The size effect is explained by surface depletion at the diode sidewalls and by local changes of the external voltage over the diode area. The calculated maximum frequency of oscillation showed no size effect because the increase of the negative differential resistance of the small size diodes is compensated by reduced device capacitance.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
