用于微波和毫米波衬底的掺杂LiZn0.92Cu0.08PO4陶瓷的制备与表征

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics International Pub Date : 2022-02-07 DOI:10.1108/mi-07-2021-0068

B. Synkiewicz-Musialska, D. Szwagierczak, J. Kulawik, E. Czerwińska

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引用次数: 0

摘要

目的本文报道了以Li2CO3为助烧剂的LiZn0.92Cu0.08PO4陶瓷材料的制备过程，并介绍了其微观结构和介电性能。设计/方法/方法通过固态合成、掺杂、研磨、压制和烧结制备了基于添加Li2CO3的LiZn0.92Cu0.08PO4的衬底。在100 Hz至2 MHz范围和0.1–3的时域光谱太赫兹范围。发现掺杂的LiZnPO4陶瓷，其在1 THz和800的低烧结温度成功地制备了适用于低温共烧陶瓷（LTCC）技术的°C。然而，还需要进一步的研究，通过优化掺杂水平、合成和烧结条件来降低介电损耗。独创性/价值寻找适用于LTCC技术的新型低介电常数材料和优化工艺是开发现代微波电路的重要任务。首次在太赫兹范围内对掺杂的LiZnPO4陶瓷进行介电表征，这对该衬底材料的潜在毫米波应用至关重要。

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Preparation and characterization of doped LiZn0.92Cu0.08PO4 ceramic for microwave and millimeter-wave substrates

Purpose This paper aims to report on fabrication procedure and presents microstructure and dielectric behaviour of LiZn0.92Cu0.08PO4 ceramic material with Li2CO3 as a sintering aid. Design/methodology/approach Substrates based on LiZn0.92Cu0.08PO4 with Li2CO3 addition were prepared via solid-state synthesis, doping, milling, pressing and sintering. Characterization of the composition, microstructure and dielectric properties was performed using X-ray diffractometry, energy dispersive spectroscopy, scanning electron microscopy, impedance spectroscopy in the 100 Hz to 2 MHz range and time-domain spectroscopy in the 0.1–3 THz range. Findings Doped LiZnPO4 ceramic, which exhibits a low dielectric constant of 5.9 at 1 THz and low sintering temperature of 800 °C, suitable for low temperature co-fired ceramics (LTCC) technology, was successfully prepared. However, further studies are needed to lower dielectric losses by optimising the doping level, synthesis and sintering conditions. Originality/value Search for new low dielectric constant materials applicable in LTCC technology and optimization of processing are essential tasks for developing modern microwave circuits. The dielectric characterization of doped LiZnPO4 ceramic in the terahertz range, which was performed for the first time, is crucial for potential millimetre-wave applications of this substrate material.

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来源期刊

Microelectronics International 工程技术-材料科学：综合

CiteScore

1.90

自引率

9.10%

发文量

审稿时长

>12 weeks

期刊介绍： Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.