氧化后退火选择性去除光电化学蚀刻造成的4H-SiC多孔结构

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-09-06 DOI:10.1088/1361-6641/acf72e

Yunkai Li, Siqi Zhao, Shangyue Yang, Ning Guo, Weilong Yuan, Y. Pei, Guoguo Yan, Xingfang Liu

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引用次数: 0

摘要

在碱性溶液中进行光电化学（PEC）蚀刻后，在900°C下对4H-SiC进行90分钟的低温后氧化退火，可以消除蚀刻过程中形成的多孔结构，降低孔隙率，优化表面形态，这对未蚀刻表面的影响最小，允许在蚀刻和未蚀刻表面之间进行选择性处理。此外，它可以提高蚀刻深度，并能够有效地重复蚀刻过程。这些优点使PEC蚀刻成为微结构制造和表面处理的一种有价值的技术。

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Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing

Low-temperature post oxidation annealing of 4H-SiC at 900 °C for 90 min after photoelectric chemical (PEC) etching in alkaline solution can eliminate the porous structures that form during the etching process, reduce the porosity, and optimize the surface morphology, which has minimal effect on unetched surfaces, allowing for selective treatment between etched and unetched surfaces. Additionally, it can improve the etching depth and enable effective repetition of the etching process. These benefits make PEC etching a valuable technique for microstructure fabrication and surface treatment.

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.