CVD处理的ZnO薄膜作为电子器件中的固体热界面材料:LED的热性能和光学性能

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Shanmugan Subramani, M. Devarajan
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引用次数: 0

摘要

目的聚合物基热界面材料(TIMs)存在泵出问题,可以解决该问题以获得可靠的应用。已经提出并报道了固体基界面材料。本文的目的是提出基于薄膜的TIM来维持发光二极管(LED)的性能和电子器件的小型化。设计/方法/方法因此,通过化学气相沉积(CVD)方法制备了不同厚度的ZnO薄膜,并使用热瞬态分析作为高功率LED的固体TIM来测试其热行为。结果表明,ZnO薄膜边界条件下的总热阻(Rth tot)比裸Al边界条件下低。测量的界面(ZnO薄膜)电阻{放置在金属芯印刷电路板(MCPCB)板和Al衬底之间的界面层(薄膜)的(Rth bhs)热阻}几乎等于Ag膏边界条件,并且对于在30 700时测得的最小处理时间 安装在ZnO薄膜(在30分钟制备)涂覆的Al衬底上的LED的TJ值被测量为74.8°C。与Al边界条件相比,30分钟处理的ZnO薄膜的结温差(ΔTJ)约为4.7°C。与Al衬底和Ag膏体边界条件相比,在ZnO薄膜边界条件下(在30分钟下处理)也观察到测试LED的低相关色温和高光通量值。独创性/价值总体而言,30分钟CVD处理的ZnO薄膜将是商业TIM实现高效热管理的替代方案。这将随着所提出的材料降低TJ值而增加LED的寿命。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CVD processed ZnO thin film as solid thermal interface material in electronic devices: thermal and optical performance of LED
Purpose Polymer-based thermal interface materials (TIMs) are having pump out problem and could be resolved for reliable application. Solid-based interface materials have been suggested and reported. The purpose of this paper is suggesting thin film-based TIM to sustain the light-emiting diode (LED) performance and electronic device miniaturization. Design/methodology/approach Consequently, ZnO thin film at various thicknesses was prepared by chemical vapour deposition (CVD) method and tested their thermal behaviour using thermal transient analysis as solid TIM for high-power LED. Findings Low value in total thermal resistance (Rth-tot) was observed for ZnO thin film boundary condition than bare Al boundary condition. The measured interface (ZnO thin film) resistance {(Rth-bhs) thermal resistance of the interface layer (thin film) placed between metal core printed circuit board (MCPCB) board and Al substrates} was nearly equal to Ag paste boundary condition and showed low values for ZnO film prepared at 30 min process time measured at 700 mA. The TJ value of LED mounted on ZnO thin film (prepared at 30 min.) coated Al substrates was measured to be 74.8°C. High value in junction temperature difference (ΔTJ) of about 4.7°C was noticed with 30 min processed ZnO thin film when compared with Al boundary condition. Low correlated colour temperature and high luminous flux values of tested LED were also observed with ZnO thin film boundary condition (processed at 30 min) compared with both Al substrate and Ag paste boundary condition. Originality/value Overall, 30 min CVD processed ZnO thin film would be an alternative for commercial TIM to achieve efficient thermal management. This will increase the life span of the LED as the proposed material decreases the TJ values.
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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
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