A.K. Sahoo , P.-H. Chen , C.-H. Lin , R.-S. Liu , B.-J. Lin , T.-S. Kao , P.-W. Chiu , T.-P. Huang , W.-Y. Lai , J. Wang , Y.-Y. Lee , C.-K. Kuan
{"title":"用于25nm线/空间图案的EUV干涉光刻技术的发展","authors":"A.K. Sahoo , P.-H. Chen , C.-H. Lin , R.-S. Liu , B.-J. Lin , T.-S. Kao , P.-W. Chiu , T.-P. Huang , W.-Y. Lai , J. Wang , Y.-Y. Lee , C.-K. Kuan","doi":"10.1016/j.mne.2023.100215","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.</p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"20 ","pages":"Article 100215"},"PeriodicalIF":2.8000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of EUV interference lithography for 25 nm line/space patterns\",\"authors\":\"A.K. Sahoo , P.-H. Chen , C.-H. Lin , R.-S. Liu , B.-J. Lin , T.-S. Kao , P.-W. Chiu , T.-P. Huang , W.-Y. Lai , J. Wang , Y.-Y. Lee , C.-K. Kuan\",\"doi\":\"10.1016/j.mne.2023.100215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.</p></div>\",\"PeriodicalId\":37111,\"journal\":{\"name\":\"Micro and Nano Engineering\",\"volume\":\"20 \",\"pages\":\"Article 100215\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2023-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nano Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S259000722300045X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nano Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S259000722300045X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Development of EUV interference lithography for 25 nm line/space patterns
In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.
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