阳极氧化铝模板法制备MoS2纳米管场效应晶体管的制备与表征

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering Pub Date : 2023-06-01 DOI:10.1016/j.mne.2023.100200

Naoya Shiraiwa , Kyosuke Murata , Takuto Nakazawa , Akihiro Fukawa , Koichi Takase , Takeshi Ito , Shoso Shingubara , Tomohiro Shimizu

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引用次数: 0

摘要

在阳极氧化铝（AAO）模板中制备了基于MoS2纳米管的场效应晶体管（FET）。通过在AAO模板中热分解（NH4）2MoS4前体来制备MoS2纳米管。MoS2纳米管的直径约为80nm，这对应于AAO模板的尺寸。肖特基型FET是用Au和Pt电极制备的，并且FET表现出n型行为，在VSD=0.5V时导通/关断比超过103。

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Fabrication and characterization of field-effect transistors based on MoS2 nanotubes prepared in anodic aluminum oxide templates

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Fabrication and characterization of field-effect transistors based on MoS2 nanotubes prepared in anodic aluminum oxide templates

Field-effect transistors (FETs) based on MoS₂ nanotubes prepared in anodic aluminum oxide (AAO) templates have been fabricated and demonstrated in this work. MoS₂ nanotubes were prepared by the thermal decomposition of (NH₄)₂MoS₄ precursors in the AAO template. The diameter of the MoS₂ nanotubes was approximately 80 nm, which corresponded to the size of the AAO template. Schottky-type FETs were prepared with Au and Pt electrodes, and the FETs exhibited n-type behavior, with on/off ratios that exceeded 10³ at V_SD = 0.5 V.

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来源期刊

Micro and Nano Engineering Engineering-Electrical and Electronic Engineering

CiteScore

3.30

自引率

0.00%

发文量

审稿时长

80 days