基于内禀阻抗增强和adc内计算的高并行rram内存宏

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Tian Xie;Shimeng Yu;Shaolan Li
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引用次数: 1

摘要

电阻随机存取存储器(RRAM)被认为是一个很有前途的内存计算(CIM)平台;然而,在高通量和高分辨率的情况下,它们往往会迅速失去能量效率。这项工作没有使用存取晶体管作为开关,而是探索了它们作为公共栅极电流缓冲器的模拟特性。因此,可以使电池电流最小化,并提高输出阻抗。为了进一步降低外围电路的复杂度,还提出了ADC内计算(IAC)的思想。得益于所提出的思想,可以实现基于CIFAR-10数据集的预训练VGG-8网络,并且以8.9TOPS/W的能量效率(对于8位乘法和累加(MAC)运算)实现87.2%的准确率,表明所提出的技术能够实现低失真的部分和结果,同时仍然能够以功率有效的方式操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A High-Parallelism RRAM-Based Compute-In-Memory Macro With Intrinsic Impedance Boosting and In-ADC Computing
Resistive random access memory (RRAM) is considered to be a promising compute-in-memory (CIM) platform; however, they tend to lose energy efficiency quickly in high-throughput and high-resolution cases. Instead of using access transistors as switches, this work explores their analog characteristics as common-gate current buffers. So the cell current can be minimized and the output impedance is boosted. The idea of In-ADC Computing (IAC) is also proposed to further decrease the complexity of the peripheral circuits. Benefiting from the proposed ideas, a pretrained VGG-8 network based on the CIFAR-10 dataset can be implemented, and an accuracy of 87.2% is achieved with 8.9 TOPS/W energy efficiency (for 8-bit multiply-and-accumulate (MAC) operation), demonstrating that the proposed techniques enable low-distortion partial sum results while still being able to operate in a power-efficient way.
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来源期刊
CiteScore
5.00
自引率
4.20%
发文量
11
审稿时长
13 weeks
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