在200/300 mm中试线环境中用于DUV光刻的水溶性生物源抗蚀剂

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Isabelle Servin , Alexandre Teolis , Arnaud Bazin , Paule Durin , Olha Sysova , Corinne Gablin , Benoît Saudet , Didier Leonard , Olivier Soppera , Jean-Louis Leclercq , Yann Chevolot , Raluca Tiron , Thierry Delair , Stéphane Trombotto
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引用次数: 2

摘要

水基生物源抗蚀剂通过取代目前由石油化学公司发布的用于微电子应用的光致抗蚀剂,有望成为深紫外(DUV)光刻的替代品。利用海产品工业废料生产的壳聚糖薄膜,通过用水替代,可以在没有有机溶剂和碱基显影剂的情况下进行图案化处理。在展示了转移到二氧化硅10mm晶片中后在实验室规模下的高分辨率图案化之后,我们在这里研究了用于193nm DUV光刻的在CEA Leti的300mm导频线规模上的工业预转移壳聚糖基光致抗蚀剂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Water-soluble bio-sourced resists for DUV lithography in a 200/300 mm pilot line environment

Water-soluble bio-sourced resists for DUV lithography in a 200/300 mm pilot line environment

Water-based bio-sourced resists are promising candidates as alternatives for deep ultraviolet (DUV) lithography by replacing current photoresists issued from petro-chemistry for microelectronics application. Chitosan films produced from seafood industry wastes enable patterning processes free of organic solvent and alkali-based developers, by substitution with water. After demonstrating high-resolution patterning at lab-scale after transfer into silica 10 mm wafer, we investigate here the industrial pre-transfer chitosan-based photoresist on the 300 mm pilot line scale at CEA-Leti for 193 nm DUV lithography.

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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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