基于TDR无损检测方法的SiP器件故障定位技术

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics International Pub Date : 2023-02-07 DOI:10.1108/mi-09-2022-0168

Hui Xiao, X. Guo, Fangzhou Chen, Weiwei Zhang, Hao Liu, Ze Chen, Jiahao Liu

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引用次数: 0

摘要

目的传统的无损故障定位技术在分辨率和精度方面越来越难以满足高密度和集成化系统封装（SIP）设备的要求。时域反射（TDR）是一种新的定位分析技术，由于其兼容性好、精度高、效率高等优点，逐渐在电子工业中得到应用。然而，关注TDR技术在SiP器件中的应用的报道有限。设计/方法/方法在本研究中，作者使用TDR技术来定位SiP器件的故障，结果表明，TDR技术可以准确定位SiP装置内部焊点的裂纹。实测电磁波信号传输速率为9.56 × 107 m/s。此外，TDR技术成功定位了失效点，失效点主要是由SiP器件边缘焊点在1500次热循环后开裂引起的。独创性/价值TDR技术被创造性地应用于SiP器件的故障定位，并实现了定量分析。

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A failure location technology for SiP devices based on TDR nondestructive testing method

Purpose Traditional nondestructive failure localization techniques are increasingly difficult to meet the requirements of high density and integration of system in package (SIP) devices in terms of resolution and accuracy. Time domain reflection (TDR) is recognized as a novel positioning analysis technology gradually being used in the electronics industry because of the good compatibility, high accuracy and high efficiency. However, there are limited reports focus on the application of TDR technology to SiP devices. Design/methodology/approach In this study, the authors used the TDR technique to locate the failure of SiP devices, and the results showed that the TDR technique can accurately locate the cracking of internal solder joints of SiP devices. Findings The measured transmission rate of electromagnetic wave signal was 9.56 × 107 m/s in the experimental SiP devices. In addition, the TDR technique successfully located the failure point, which was mainly caused by the cracking of the solder joint at the edge of the SiP device after 1,500 thermal cycles. Originality/value TDR technology is creatively applied to SiP device failure location, and quantitative analysis is realized.

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来源期刊

Microelectronics International 工程技术-材料科学：综合

CiteScore

1.90

自引率

9.10%

发文量

审稿时长

>12 weeks

期刊介绍： Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.