(Mg1/3Ta2/3)0.01Ti0.99O2巨介电陶瓷的两步闪速烧结

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhentao Wang, Pai Peng, Sujuan Zhong, Yafang Cheng, Dong Xu
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引用次数: 1

摘要

本论文的目的一方面是通过两步闪烧法降低烧结温度,缩短烧结时间,提高样品的电性能,另一方面是研究电场对闪烧样品的相结构、微观结构和电性能的影响。本文分别采用常规烧结和两步闪蒸法制备了(Mg1/3Ta2/3)0.01Ti0.99O2巨型介电陶瓷。进一步研究了电场(600 ~ 750 V/cm)对(Mg1/3Ta2/3)0.01Ti0.99O2巨介电陶瓷电学性能的影响。结果表明:与常规烧结相比,两步闪速烧结的烧结温度可降低200℃,烧结时间可缩短12倍;所有烧结样品均为单一金红石型TiO2结构。与常规烧结相比,两步闪速烧结试样具有更细的晶粒尺寸。两步闪蒸烧结样品具有与常规烧结样品相似的介电性能。闪蒸烧结试样的介电常数随电场的增大而减小。当电场为700 V/cm时,陶瓷样品的介电性能最佳,在1 kHz时介电常数约为5.5 × 103,介电损耗约为0.18。阻抗谱分析表明,优异的介电性能归功于内部阻挡层电容模型。独创性/价值本文不仅为共掺杂TiO2巨介电陶瓷的制备提供了一种新的方法,而且在大幅提高效率和节能方面具有很大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-step flash sintering of (Mg1/3Ta2/3)0.01Ti0.99O2 giant dielectric ceramics
Purpose The purpose of this paper on the one hand is to reduce the sintering temperature, shorten the sintering time and improve the electrical properties of the sample through the two-step flash sintering method and on the other hand is to study the effect of electric field on the phase structure, microstructure and electrical properties of the flash sintering sample. Design/methodology/approach In this paper, (Mg1/3Ta2/3)0.01Ti0.99O2 giant dielectric ceramics were prepared by conventional sintering and two-step flash sintering, respectively. Further, the effect of electric field (600–750 V/cm) on the electrical properties of (Mg1/3Ta2/3)0.01Ti0.99O2 giant dielectric ceramics was studied. Findings The results show that compared with the conventional sintering, the sintering temperature of the two-step flash sintering can be reduced by 200°C and the sintering time can be shortened by 12 times. All sintered samples were single rutile TiO2 structure. Compared with conventional sintering, two-step flash sintering samples have finer grain size. The two-step flash sintered sample has similar dielectric properties to the conventional sintered sample. The dielectric constant of flash sintered samples decreases with the increase of electric field. When the electric field is 700 V/cm, the ceramic sample has the optimal dielectric properties, where the dielectric constant is approximately 5.5 × 103 and the dielectric loss is about 0.18 at 1 kHz. Impedance spectroscopy analysis shows that the excellent dielectric properties are attributed to the internal barrier layer capacitance model. Originality/value This paper not only provides a new method for the preparation of co-doped TiO2 giant dielectric ceramics but also has great potential in greatly improving efficiency and saving energy.
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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
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