镁/二硫化钼异质结场效应晶体管的电学和电子特性的理论研究

Pub Date : 2023-07-01 DOI:10.1166/sam.2023.4474
Xidong Chen, N. Tang, Mohamed H. Mahmoud, Amir Altinawi
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引用次数: 0

摘要

本文设计了基于二元单层材料Mg和二硫化钼的二维异质结双相材料FET。尽管具有六边形晶体结构,单层Mg和二硫化钼具有良好的晶格匹配能力,失配度约为5%。Mg/二硫化钼场效应晶体管(FET)的静电特性非常适合紧凑型制造。掌握了第一性原理的电子结构研究、基于密度泛函理论的MODES场效应晶体管的光学、机械和电化学特性,以掌握FET的静电掺杂相关特征。基于Silvaco TCAD平台进行了仿真研究。在工程实践中,无论是设计还是应用,都具有一定的理论价值。
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Electrical and Electronic Properties of Magnesium/Molybdenum Disulfide Heterojunction Field Effect Transistors: A Theoretical Study
The present article designs two-dimensional heterojunction duplex material FETs based on binary monolayer material, Mg and molybdenum disulfide. Despite having a hexagonal crystal structure, the monolayer Mg and molybdenum disulfide have good lattice matching ability, with a mismatch degree of approximately 5%. The electrostatic characteristics of Mg/molybdenum disulfide field effect transistors (FETs) are well suited for compact fabrication. Electronic structure of first-principles investigations, optical, mechanical, and electrochemical properties of MODES field-effect transistors based on density functional theory are mastered in order to master the electrostatic doping associated features of FETs. Based on the Silvaco TCAD platform, this simulation study was performed. There is theoretical value in engineering practice, both in terms of design and application.
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