N面GaN衬底粗糙化以提高GaN-on-GaN LED的性能

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics International Pub Date : 2021-08-23 DOI:10.1108/mi-02-2021-0011

E. A. Alias, M. Samsudin, S. Denbaars, J. Speck, S. Nakamura, N. Zainal

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引用次数: 2

摘要

目的本研究旨在在生长GaN on GaN发光二极管（LED）之前，对N面（背面）GaN衬底进行粗糙化处理，以提高LED的性能。设计/方法/方法用三种不同的蚀刻剂对GaN衬底的N面进行粗糙化；氢氧化铵（NH4OH）、NH4OH和H2O2的混合物（NH4OH:H2O2）和氢氧化钾（KOH）。在所有情况下，当对衬底进行蚀刻时，在表面上成功地形成了六边形金字塔。发现30岁以下蚀刻分钟后，NH4OH:H2O2蚀刻得到的金字塔密度最高，为5 × 109 cm–2。KOH和NH4OH蚀刻的密度为3.6 × 109和5 × 108 cm–2。在电流密度为20的标准操作下在用NH4OH:H2O2粗糙化的GaN衬底上，LED的光功率和外量子效率分别为12.3mW和22%，高于其对应物。原创性/价值本研究证明NH4OH:H2O2是一种用于粗糙化N面GaN衬底的新型蚀刻剂。结果表明，与KOH和NH4OH相比，这种蚀刻剂增加了N面GaN衬底上金字塔的密度，这随后导致LED的光功率和外量子效率更高。

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N-face GaN substrate roughening for improved performance GaN-on-GaN LED

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.

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来源期刊

Microelectronics International 工程技术-材料科学：综合

CiteScore

1.90

自引率

9.10%

发文量

审稿时长

>12 weeks

期刊介绍： Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.