用会聚束电子衍射对称破坏指数评价聚焦离子束制备TEM样品的质量

IF 1.8 4区工程技术

Microscopy Pub Date : 2021-08-01 DOI:10.1093/jmicro/dfab002

Daisuke Morikawa;Masaki Ageishi;Kaori Sato;Kenji Tsuda;Masami Terauchi

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引用次数: 0

摘要

用会聚束电子衍射（CBED）研究了在不同条件下制备的硅中透射电子显微镜样品的结晶质量退化。采用不同加速电压的聚焦离子束（FIB）、氩离子铣削和破碎方法制备了样品。CBED图案的对称性破坏是通过对称性破坏指数S来定量评估的，这在以前已经报道过。通过在最终工艺中降低FIB制造的加速电压，抑制了FIB样品的退化和不均匀性。

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Evaluation of TEM specimen quality prepared by focused ion beam using symmetry breaking index of convergent-beam electron diffraction

Degradation of the crystalline quality of transmission electron microscopy specimens in silicon prepared with different conditions has been examined using convergent-beam electron diffraction (CBED). The specimens are prepared using focused ion beam (FIB) with different accelerating voltages, Ar-ion milling and crushing method. Symmetry breaking of CBED patterns was quantitatively evaluated by symmetry breaking index S, which has been previously reported. The degradation and inhomogeneity of the FIB specimen were suppressed by decreasing the accelerating voltages of the FIB fabrication in the final process.

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来源期刊

Microscopy 工程技术-显微镜技术

自引率

11.10%

发文量

审稿时长

>12 weeks

期刊介绍： Microscopy, previously Journal of Electron Microscopy, promotes research combined with any type of microscopy techniques, applied in life and material sciences. Microscopy is the official journal of the Japanese Society of Microscopy.