低压透射电子显微镜中绝缘体上硅直接电子探测器的性能

IF 1.8 4区工程技术

Microscopy Pub Date : 2021-06-01 DOI:10.1093/jmicro/dfaa072

Takafumi Ishida;Akira Shinozaki;Makoto Kuwahara;Toshinobu Miyoshi;Koh Saitoh;Yasuo Arai

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引用次数: 1

摘要

在低压透射电子显微镜（LVTEM）中评估了使用绝缘体上硅（SOI）技术的直接电子探测器的性能。在背光源照射下测量了探测器的调制传递函数和探测量子效率。SOI型探测器被证明对于低能量电子的直接探测具有高灵敏度和高效率。因此，该检测器被认为适合于LVTEM中的低剂量成像。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope

The performance of a direct electron detector using silicon-on-insulator (SOI) technology in a low-voltage transmission electron microscope (LVTEM) is evaluated. The modulation transfer function and detective quantum efficiency of the detector are measured under backside illumination. The SOI-type detector is demonstrated to have high sensitivity and high efficiency for the direct detection of low-energy electrons. The detector is thus considered suitable for low-dose imaging in an LVTEM.

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来源期刊

Microscopy 工程技术-显微镜技术

自引率

11.10%

发文量

审稿时长

>12 weeks

期刊介绍： Microscopy, previously Journal of Electron Microscopy, promotes research combined with any type of microscopy techniques, applied in life and material sciences. Microscopy is the official journal of the Japanese Society of Microscopy.