采用老化角提高器件老化仿真模型精度的方法

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-08-10 DOI:10.1109/TDMR.2023.3304280

Qianqian Sang;Xinhuan Yang;Jianyu Zhang;Chuanzheng Wang;Mingyan Yu;Yuanfu Zhao

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引用次数: 0

摘要

为了在设计阶段准确地预测电路寿命，精确的器件老化模型是必不可少的。虽然学术界和工业界已经建立了一些老化仿真模型，但大多数老化模型只考虑了单一的影响因素，导致仿真与试验存在差异。本文提出了一种同时考虑不同mosfet之间工艺变化(PV)和老化变化(AV)的老化仿真模型。通过统计分析老化效应对器件参数的影响，并借鉴用于表征制造过程变化的过程角(PC)概念，提出使用老化角(AC)来表征器件之间参数退化的变化。仿真结果表明，该模型能更准确地预测器件的退化范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Method Adopting Aging Corner to Improve the Accuracy of Device Aging Simulation Model

In order to predict the circuit liftetime accurately in the design phase, precise device aging models are enssential. Although some aging simulation models have been established in academia and industry, most of the aging models consider only single influence factor, resulting in differences between simulation and test. This paper proposes an aging simulation model that considers both process variation (PV) and aging variation (AV) among different MOSFETs. By statistically analyzing the influence of aging effect on device parameters, and borrowing from the concept process corner (PC), which is used to characterize the variation in the fabrication process, here in this paper we propose to use aging corner (AC), to characterize the variation in parameter degradation among devices. The simulation results show that the new model can predict the device degradation range more accurately.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.