HEMT激发GaN光波导:热应力分析与展望

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-07-04 DOI:10.1109/TDMR.2022.3188317

Nagarajan Nallusamy;Rahul Singhal;Sunil Kumar Sharma;Dipendra Singh Rawal

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引用次数: 0

摘要

本文提出了在热应力下使用硅(Si)、碳化硅(SiC)和蓝宝石(Al2O3)衬底的高电子迁移率晶体管(HEMT)激发的氮化镓铝(AlGaN)/氮化镓(GaN)/氮化铝(AlN)光波导。分析了光与20°C至700°C热应力范围的相互作用，并通过调整核心，包层和衬底厚度提出了优化的框架设计。研究表明，从色散和约束损耗分析来看，与硅(Si)和蓝宝石衬底的HEMT结构相比，SiC衬底的GaN HEMT更适合于高温和传感平台。热应力诱导的研究将主要用于传感、非线性应用，如可调谐超连续谱产生和恶劣环境下的光谱学。此外，本文提出的基于HEMT启发的GaN光波导在光域的波导分析，由于其能够在电和光域同时工作，因此有可能用于电光调制器应用。

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HEMT Inspired GaN Optical Waveguides: Analysis Under Thermal Stress and Prospects

In this paper, high electron mobility transistor (HEMT) inspired aluminium gallium nitride (AlGaN)/gallium nitride (GaN)/aluminium nitride (AlN) optical waveguides are proposed under thermal stress using silicon (Si), silicon carbide (SiC), and sapphire (Al ₂ O ₃ ) substrates. The interaction of light with the thermal stress range of 20°C to 700°C is analyzed and an optimized framework design by adjusting the core, cladding, and substrate thicknesses is presented in this work. The study suggests that from the dispersion and confinement loss analysis, the SiC substrate-based GaN HEMT is suitable for high temperature and sensing platforms compared with silicon (Si) and sapphire substrates based HEMTs structure. The thermal stress-induced studies will mainly be utilized for sensing, nonlinear applications like tunable supercontinuum generation and spectroscopy in harsh environments. In addition, waveguide analysis based on HEMT inspired GaN optical waveguide proposed here in an optical domain potentially be used in electro-optical modulator application due to its ability to operate in both electrical and optical domain.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.