硅光子环调制器金属加热器电迁移性能的改进

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-07-01 DOI:10.1109/TDMR.2022.3187822

David Coenen;Kristof Croes;Artemisia Tsiara;Herman Oprins;Veerle Simons;Olalla Varela Pedreira;Yoojin Ban;Joris Van Campenhout;Ingrid De Wolf

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引用次数: 1

摘要

环形谐振硅光子(SiPho)器件对温度敏感，需要热调谐才能稳定运行，这是通过集成金属加热器完成的。本文采用标定的电热有限元模型研究了钨加热器的电迁移和热性能。用于向加热器提供电流的电流注入器是已知的电迁移的弱点。所提出的模型研究表明，优化热性能和优化电磁性能的设计要求相互冲突，因此需要仔细权衡，并得到实验可靠性数据的支持。基于建模结果，提出了性能显著提高的新器件设计方案。最后，介绍了一种新的方法，可以预测w加热器的寿命，给定特定的操作条件，如环境温度和所需的相移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electromigration Performance Improvement of Metal Heaters for Si Photonic Ring Modulators

Ring-based, resonant Si photonic (SiPho) devices are temperature sensitive and require thermal tuning for stable operation, which is accomplished with integrated metallic heaters. This paper investigates the combined electromigration (EM) and thermal performance of tungsten (W) heaters using calibrated electro-thermal finite element models. The current injectors that are used to supply the current to the heater are a known weak spot for electromigration. The presented modelling study shows the conflicting design requirements for optimal thermal performance and optimal EM performance, which results in the need of a careful trade-off, supported by experimental reliability data. Based on modelling results, new device designs are proposed with significant performance increase. Lastly, a new methodology is introduced which allows to predict the lifetime of the W-heaters, given specific operating conditions such as ambient temperature and required phase shift.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.