超宽带超材料基太赫兹吸收器的设计与仿真研究

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, FLUIDS & PLASMAS
Sahil Kumar;V. Sivavenkateswara Rao
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引用次数: 0

摘要

提出了一种简单的、基于超宽带超材料的完美吸收体,其特点是由三个二氧化钒(VO2)环组成的新型单元电池,由矩形切口战略性地中断。多层结构由位于VO2之间的四氟乙烯(Teflon)组成,并由金(Au)地平面支撑,作为反射层。单元电池的模拟结果表明,吸收剂的吸收带宽为4.93太赫兹(THz),当VO2处于导电(金属)状态时,吸收带宽从3.44太赫兹到8.37太赫兹。在该波段内,该结构还表现出角稳定性和4和6太赫兹的接近统一(完美)吸收,使其非常适合于太赫兹传感、成像和隐身等应用。该吸波器的分数带宽(FBW)为83.4%。给出了2.5、4、6和8.24 THz频率下的电场分布和表面电流密度。此外,还探讨了所提出的设计对几种几何参数变化和VO2电导率的敏感性研究,并提出了各自性能背后的潜在原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Simulation Investigations of Ultrawideband Metamaterial-Based Terahertz Absorber
A simple, ultrawideband metamaterial-based perfect absorber is proposed, featuring a novel unit cell composed of three vanadium dioxide (VO2) rings strategically interrupted by rectangular cut outs. The multilayer structure consists of tetrafluoroethylene (Teflon) positioned between VO2 and is backed by a gold (Au) ground plane, which acts as a reflective layer. The simulation results of the proposed unit cell predict that the absorption bandwidth of the proposed absorber is 4.93 terahertz (THz), spanning from 3.44 to 8.37 THz when VO2 is in the conducting (metallic) state. Within this band, the structure also demonstrates angular stability and near unity (perfect) absorption at 4 and 6 THz, making it highly suitable for applications such as THz sensing, imaging, and stealth applications. The fractional bandwidth (FBW) of the absorber is found to be 83.4%. The electric field distribution and surface current density result at frequencies, namely, 2.5, 4, 6, and 8.24 THz are presented. Moreover, the sensitivity studies of the proposed design are explored for several geometric parameter variations and conductivities of the VO2, and the potential reasons behind the respective performance are presented.
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来源期刊
IEEE Transactions on Plasma Science
IEEE Transactions on Plasma Science 物理-物理:流体与等离子体
CiteScore
3.00
自引率
20.00%
发文量
538
审稿时长
3.8 months
期刊介绍: The scope covers all aspects of the theory and application of plasma science. It includes the following areas: magnetohydrodynamics; thermionics and plasma diodes; basic plasma phenomena; gaseous electronics; microwave/plasma interaction; electron, ion, and plasma sources; space plasmas; intense electron and ion beams; laser-plasma interactions; plasma diagnostics; plasma chemistry and processing; solid-state plasmas; plasma heating; plasma for controlled fusion research; high energy density plasmas; industrial/commercial applications of plasma physics; plasma waves and instabilities; and high power microwave and submillimeter wave generation.
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