p-i-n钙钛矿太阳能电池双钝化的超薄金属有机骨架夹层策略

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-10-06 DOI:10.1016/j.mssp.2025.110106

M.H. Rajabi Manshadi , A.M. Mozafarbeigi , S. Gholizadeh , Z. Shadrokh , Y. Abdi

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引用次数: 0

摘要

本研究探讨了以NiO为空穴传输层（HTL）的倒（p-i-n）钙钛矿太阳能电池（PSCs）中夹心钙钛矿活性层的超薄金属有机框架（MOF）层的浓度和结构集成度的影响。双MOF中间层的引入显著提高了钙钛矿薄膜的结晶度、晶粒尺寸和环境稳定性。采用双MOF结构（NiO/MOF/钙钛矿/MOF/PCBM/Ag）的器件，功率转换效率（PCE）从12.06%（参考文献：NiO/钙钛矿/PCBM/Ag）显著提高到16.11%。这约34%的绝对增强主要是由于短路电流密度（Jsc）的改善，从20.06 mA/cm2增加到22.44 mA/cm2，这是由于优化的光捕获和优越的薄膜形态。电化学阻抗谱（EIS）验证了双mof器件中电荷转移电阻的降低和载流子输运的改善，参考器件的值为368.33 Ω，双mof器件的值为206.84 Ω。此外，在环境条件下（25°C， 45±5%相对湿度）30天后，双mof器件保持了超过96%的初始功率转换效率（PCE），这与参考器件中看到的显着退化形成鲜明对比。这些发现强调了mof -钙钛矿异质结构在实现稳定、高性能psc方面的潜力。

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Ultrathin metal-organic framework sandwiching strategy for dual-passivation in p-i-n perovskite solar cells

This study explores the effects of both the concentration and structural integration of ultrathin metal–organic framework (MOF) layers that sandwich the perovskite active layer in inverted (p–i–n) perovskite solar cells (PSCs), employing NiO as the hole transport layer (HTL). The introduction of dual MOF interlayers significantly enhances the crystallinity, grain size, and environmental stability of the perovskite film. Devices with the dual-MOF configuration (NiO/MOF/Perovskite/MOF/PCBM/Ag) demonstrated a notable increase in power conversion efficiency (PCE), from 12.06 % (reference: NiO/Perovskite/PCBM/Ag) to 16.11 %. This ∼34 % absolute enhancement is primarily attributed to improved short-circuit current density (Jsc), which increased from 20.06 to 22.44 mA/cm², owing to optimized light harvesting and superior film morphology. Electrochemical impedance spectroscopy (EIS) verified the decrease in charge transfer resistance and improved carrier transport in the dual-MOF devices, with values of 368.33 Ω for the reference device and 206.84 Ω for the dual-MOF device. In addition, dual-MOF devices maintained over 96 % of their initial power conversion efficiency (PCE) after a 30-day period in ambient conditions (25 °C, 45 ± 5 % relative humidity), which is in stark contrast to the significant degradation that was seen in the reference devices. These findings underscore the potential of MOF–perovskite heterostructures for achieving stable, high-performance PSCs.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.