调整分层α-MoO3/CoS2纳米结构的赝电容性能以增强水对称超级电容器的电化学性能

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mehedi Hasan, Md. Raihan Siddiki, Md. Abdullah Zubair and Muhammad Rakibul Islam
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引用次数: 0

摘要

本研究采用一步水热法合成了不同CoS2含量(0-7% wt)的α-MoO3/CoS2纳米复合材料,研究了CoS2掺入α-MoO3的影响,并确定了提高电化学储能性能的最佳成分。在三电极条件下,α-MoO3/CoS2在0.5 a g−1电流密度下的比电容最高,达到553 F g−1,明显优于α-MoO3的216 F g−1。此外,优化后的纳米复合材料α-MoO3/CoS2 (5% wt)在5 A g−1条件下充放电5000次后仍保持82.1%的初始电容,具有良好的循环稳定性。形貌和结构研究表明,α-MoO3的电化学行为增强源于与结构缺陷相关的表面活性位点的存在和层间距离的扩大,这两种因素共同促进了离子的高效吸附,促进了层间离子嵌入,加速了表面氧化还原反应。此外,α-MoO3/CoS2 (5% wt)纳米复合材料表现出增强的电荷转移动力学,反映了界面电荷转移阻力的抑制,从而导致更高的比电容。此外,基于α-MoO3/CoS2 (5% wt)纳米复合材料的对称超级电容器在901 W kg - 1的功率密度下实现了25.09 Wh kg - 1的高能量密度,成功地为红色LED供电290秒。该器件表现出优异的长期电化学稳定性,在5000次连续充放电循环后保持了97%的原始电容。结果表明,导电CoS2的加入显著提高了α-MoO3的电化学性能,表明其适合用于下一代储能器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Tailoring the pseudocapacitive performance of hierarchical α-MoO3/CoS2 nanostructures for enhanced electrochemical properties of aqueous symmetric supercapacitors

Tailoring the pseudocapacitive performance of hierarchical α-MoO3/CoS2 nanostructures for enhanced electrochemical properties of aqueous symmetric supercapacitors

In this study, α-MoO3/CoS2 nanocomposites with varying CoS2 contents (0–7% wt) were synthesized using a one-step hydrothermal method to investigate the effect of CoS2 incorporation into α-MoO3 and to identify the optimal composition for enhanced electrochemical energy storage performance. Among the synthesized nanomaterials, the α-MoO3/CoS2 with 5% wt CoS2 exhibited the highest specific capacitance of 553 F g−1 at a current density of 0.5 A g−1 in a three-electrode setup, significantly outperforming α-MoO3, which delivered 216 F g−1. Additionally, the optimized nanocomposite, α-MoO3/CoS2 (5% wt) retained 82.1% of its initial capacitance after 5000 charge–discharge cycles at 5 A g−1, indicating excellent cycling stability. Morphological and structural investigations showed that the enhanced electrochemical behavior of α-MoO3 stemmed from the presence of surface-active sites associated with structural defects and enlarged interlayer distance, which collectively facilitated efficient ion adsorption, promoted interlayer ion intercalation, and accelerated surface redox reactions. Furthermore, the α-MoO3/CoS2 (5% wt) nanocomposite exhibited enhanced charge-transfer kinetics, reflecting suppressed interfacial charge-transfer resistance and resulting in a higher specific capacitance. Additionally, symmetric supercapacitors based on the α-MoO3/CoS2 (5% wt) nanocomposite achieved a high energy density of 25.09 Wh kg−1 at a power density of 901 W kg−1, successfully powering a red LED for 290 seconds. The device exhibited outstanding long-term electrochemical stability, preserving 97% of its original capacitance after 5000 consecutive charge–discharge cycles. The results demonstrate that the incorporation of conductive CoS2 significantly improves the electrochemical performance of α-MoO3, indicating its suitability for next-generation energy storage devices.

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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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