层状双氢氧NiCoFeCe催化剂的制备及其析氧性能研究

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jia-Ye Zhou, Yu-Han Ye, Ji-Ping Tian, Shui-Sheng Li, Xing-Chen Jiang, Qing Zhang, Bin He
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引用次数: 0

摘要

在电催化领域,层状双氢氧化物(LDH)材料因其独特的层状结构和丰富的活性位点而备受关注,在促进析氧反应方面表现出优异的电催化活性。近年来,钴基LDHs被认为是非常有前途的候选材料,但这些材料仍然面临着电导率低、催化活性差等关键问题,这使得它们很难成为商业贵金属催化剂的合格替代品。因此,通过合理设计和开发更高效、稳定的钴基层状双氢氧化物基材料,对于促进其在电催化领域的实际应用具有重要意义。本文以ZIF-67为前驱体,通过离子交换引入Ni、Fe、Ce离子制备纳米片状NiCoFeCe-LDH催化剂。在1.0 M KOH的电解液中,该催化剂表现出优异的OER性能,在10 mA/cm2的比电流密度为240 mV时,其过电位显著降低。实验结果表明,Ce的引入显著提高了催化剂的OER活性,为掺杂稀土金属优化mof材料电催化性能的研究提供了新的理论视角和实践依据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation of layered double hydroxide NiCoFeCe catalyst and study on its oxygen evolution performance
In the field of electrocatalysis, layered double hydroxides (LDH) materials have attracted much attention due to their unique layered structure and abundant active sites, demonstrating excellent electrocatalytic activity in promoting the oxygen evolution reaction. In recent years, cobalt-based LDHs have been considered as very promising candidates, but these materials still face key issues such as low conductivity and poor catalytic activity, making it difficult for them to become qualified substitutes for commercial noble metal catalysts. Therefore, through rational design and development of more efficient and stable cobalt-based layered double hydroxide-based materials, it is of great significance for promoting their practical application in the field of electrocatalysis. This paper uses ZIF-67 as the precursor and introduces Ni, Fe, and Ce ions through ion exchange to generate nanosheet-like NiCoFeCe-LDH catalysts. In a 1.0 M KOH electrolyte, this catalyst exhibits excellent OER performance, with a significantly reduced overpotential under a specific current density of 240 mV at 10 mA/cm2. Experimental results show that the introduction of Ce significantly enhances the OER activity of the catalyst, providing a new theoretical perspective and practical basis for the study of optimizing the electrocatalytic performance of MOFs materials by doping rare earth metals.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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