28Si聚焦离子束制备平面高富集硅及其实验优化

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Maddison Coke, Mason Adshead, Ravi Acharya, Kexue Li, Katie L. Moore, David N. Jamieson, Richard J. Curry
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引用次数: 0

摘要

本研究深入研究了实验参数在利用聚焦离子束耗尽29Si和30Si硅片局部富集28Si中的作用。研究了离子注入引起的表面衰退和膨胀,平衡能量为37 keV。最大富集水平及其深度分布随28Si离子能量、电离状态以及离子束电流密度的变化而变化。总之,这使得控制富集的离子诱导过程的复杂相互作用能够被更清楚地理解和优化。此外,如何修改动态蒙特卡罗模拟(TRYDIN)能够证明,通过改变硅表面结合能,能够准确地再现实验观察结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Fabrication of Planar Highly Enriched Silicon by 28Si Focused Ion Beam and Subsequent Experimental Optimization

Fabrication of Planar Highly Enriched Silicon by 28Si Focused Ion Beam and Subsequent Experimental Optimization
This work presents an in-depth study of the role of experimental parameters in the localized 28Si enrichment, via the depletion of 29Si and 30Si, of Si wafers using a focused ion beam. Ion implantation-induced surface recession and swelling are investigated, with the energy at which these are balanced being 37 keV. The maximum level of enrichment and its depth profile are found to vary with the 28Si ion energy and ionization state, as well as the ion beam current density. Together, this enables the complex interplay of ion-induced processes that govern the enrichment to be understood more clearly and optimized. Furthermore, how modification of dynamic Monte Carlo simulations (TRYDIN) is able to demonstrate, through changing the Si surface binding energy, enables accurate reproduction of the experimentally observed results.
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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