基于Bi2Te3纳米线和碳纳米管夹层结构的自供电宽带响应光热电探测器

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Dongliang Zhang , Tianliang Feng , Haigang Hou, Jian Yang, Guiwu Liu, Junlin Liu, Guanjun Qiao
{"title":"基于Bi2Te3纳米线和碳纳米管夹层结构的自供电宽带响应光热电探测器","authors":"Dongliang Zhang ,&nbsp;Tianliang Feng ,&nbsp;Haigang Hou,&nbsp;Jian Yang,&nbsp;Guiwu Liu,&nbsp;Junlin Liu,&nbsp;Guanjun Qiao","doi":"10.1016/j.mssp.2025.110088","DOIUrl":null,"url":null,"abstract":"<div><div>The broadband photodetectors recently attract widespread interest since the detector with multiple band response is highly desired. The traditional photodetector is inferior than thermal detector in meeting such requirement because the band gap transition dependent on sufficient photon energy, and the long wavelength region with weak energy may beyond detection. Here, bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>) nanowires (∼21.5 nm diameter, aspect ratios up to 80) are embedded between carbon nanotube (CNT) layers to construct a sandwich-structured detector for broadband detection from ultraviolet to near-infrared. A temperature gradient induced by localized photothermal conversion drives directional flow of charge carriers to generate electric potential via Seebeck effect, enabling self-powered operation of the detector without external power sources. The I-V curves and position dependent photovoltage of the detector based on CNT/Bi<sub>2</sub>Te<sub>3</sub>/CNT film confirm that the mechanism of signal generation stems from photothermoelectric effect. The CNT layers serve as both an efficient photothermal conversion layer and charge transport channel, while simultaneously forming an energy filtering effect with Bi<sub>2</sub>Te<sub>3</sub> to improve the Seebeck coefficient. As a result, the CNT/Bi<sub>2</sub>Te<sub>3</sub>/CNT detector achieves efficient wideband detection across 380 nm–1550 nm, with a maximum specific detectivity reaches 1.27 × 10<sup>9</sup> cm Hz<sup>1/2</sup> W<sup>−1</sup>, representing a ∼115 % enhancement over a pure CNT detector. This work offers significant reference for the preparation of nanowire and the design of high-performance photothermoelectric detector.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110088"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-powered and broadband response photothermoelectric detector based on Bi2Te3 nanowires and carbon nanotubes sandwich structure\",\"authors\":\"Dongliang Zhang ,&nbsp;Tianliang Feng ,&nbsp;Haigang Hou,&nbsp;Jian Yang,&nbsp;Guiwu Liu,&nbsp;Junlin Liu,&nbsp;Guanjun Qiao\",\"doi\":\"10.1016/j.mssp.2025.110088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The broadband photodetectors recently attract widespread interest since the detector with multiple band response is highly desired. The traditional photodetector is inferior than thermal detector in meeting such requirement because the band gap transition dependent on sufficient photon energy, and the long wavelength region with weak energy may beyond detection. Here, bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>) nanowires (∼21.5 nm diameter, aspect ratios up to 80) are embedded between carbon nanotube (CNT) layers to construct a sandwich-structured detector for broadband detection from ultraviolet to near-infrared. A temperature gradient induced by localized photothermal conversion drives directional flow of charge carriers to generate electric potential via Seebeck effect, enabling self-powered operation of the detector without external power sources. The I-V curves and position dependent photovoltage of the detector based on CNT/Bi<sub>2</sub>Te<sub>3</sub>/CNT film confirm that the mechanism of signal generation stems from photothermoelectric effect. The CNT layers serve as both an efficient photothermal conversion layer and charge transport channel, while simultaneously forming an energy filtering effect with Bi<sub>2</sub>Te<sub>3</sub> to improve the Seebeck coefficient. As a result, the CNT/Bi<sub>2</sub>Te<sub>3</sub>/CNT detector achieves efficient wideband detection across 380 nm–1550 nm, with a maximum specific detectivity reaches 1.27 × 10<sup>9</sup> cm Hz<sup>1/2</sup> W<sup>−1</sup>, representing a ∼115 % enhancement over a pure CNT detector. This work offers significant reference for the preparation of nanowire and the design of high-performance photothermoelectric detector.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"201 \",\"pages\":\"Article 110088\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125008261\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008261","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

近年来,人们对具有多波段响应的光电探测器的要求越来越高,引起了人们的广泛关注。由于带隙跃迁依赖于足够的光子能量,并且能量较弱的长波长区域可能无法探测,传统的光电探测器在满足这一要求方面不如热探测器。在这里,将碲化铋(Bi2Te3)纳米线(直径约21.5 nm,宽高比高达80)嵌入碳纳米管(CNT)层之间,构建一个三明治结构的探测器,用于从紫外到近红外的宽带探测。局域光热转换引起的温度梯度驱动载流子定向流动,通过塞贝克效应产生电势,使探测器无需外部电源即可自供电运行。基于CNT/Bi2Te3/CNT薄膜的探测器的I-V曲线和位置依赖光电压证实了信号的产生机制源于光热电效应。碳纳米管层作为高效光热转换层和电荷传输通道,同时与Bi2Te3形成能量过滤效应,提高塞贝克系数。结果,CNT/Bi2Te3/CNT探测器在380 nm - 1550 nm范围内实现了高效的宽带检测,最大比探测率达到1.27 × 109 cm Hz1/2 W - 1,比纯CNT探测器提高了~ 115%。该工作对纳米线的制备和高性能光热电探测器的设计具有重要的参考意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-powered and broadband response photothermoelectric detector based on Bi2Te3 nanowires and carbon nanotubes sandwich structure
The broadband photodetectors recently attract widespread interest since the detector with multiple band response is highly desired. The traditional photodetector is inferior than thermal detector in meeting such requirement because the band gap transition dependent on sufficient photon energy, and the long wavelength region with weak energy may beyond detection. Here, bismuth telluride (Bi2Te3) nanowires (∼21.5 nm diameter, aspect ratios up to 80) are embedded between carbon nanotube (CNT) layers to construct a sandwich-structured detector for broadband detection from ultraviolet to near-infrared. A temperature gradient induced by localized photothermal conversion drives directional flow of charge carriers to generate electric potential via Seebeck effect, enabling self-powered operation of the detector without external power sources. The I-V curves and position dependent photovoltage of the detector based on CNT/Bi2Te3/CNT film confirm that the mechanism of signal generation stems from photothermoelectric effect. The CNT layers serve as both an efficient photothermal conversion layer and charge transport channel, while simultaneously forming an energy filtering effect with Bi2Te3 to improve the Seebeck coefficient. As a result, the CNT/Bi2Te3/CNT detector achieves efficient wideband detection across 380 nm–1550 nm, with a maximum specific detectivity reaches 1.27 × 109 cm Hz1/2 W−1, representing a ∼115 % enhancement over a pure CNT detector. This work offers significant reference for the preparation of nanowire and the design of high-performance photothermoelectric detector.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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