硼改性SrAl2O4:Eu2+,Dy3+-硼碲酸盐玻璃复合材料的剪裁陷阱动力学和发光特性

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Kiran Kalkal, Y. Dwivedi
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引用次数: 0

摘要

SrAl2O4:Eu2+,Dy3+是一种典型的持久性荧光粉,以其明显的绿色发光而闻名。然而,它在器件集成中的实际应用受到热稳定性不足和在某些环境条件下易降解的明显限制。将这种荧光粉嵌入优化的玻璃基质中提供了一种在保持结构稳定性的同时保持发光的策略。在这项工作中,将SrAl2O4:Eu2+,Dy3+荧光粉掺入不同B2O3含量的硼碲酸盐(BT)玻璃中,以探索玻璃网络改性与持续发光行为之间的相互作用。结构分析证实了SrAl2O4在非晶玻璃中嵌入时结晶度的保留。电子显微镜分析显示,玻璃中的荧光粉分散均匀。热研究表明,热稳定性高达600°C。光学表征表明,在BT玻璃中掺入硼后,带隙从3.60 eV增加到3.98 eV,而复合材料的带隙变化是由基体诱导的Eu2+环境修饰引起的。所有复合材料都保留了强烈的绿色发射(~ 520 nm),并伴有轻微的CIE颜色坐标偏移。热释光显示陷阱深度为0.65-0.98 eV,其中SrAl:BT1复合材料表现出最有利的陷阱分布和最长的余辉寿命(~ 8000 s)。这些发现确立了磷-玻璃复合材料作为稳定和调节锶-荧光粉光学特性的有力途径,为持久照明、光学数据存储、安全标记和先进的光子器件提供了途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tailoring trap dynamics and luminescence in SrAl2O4:Eu2+,Dy3+-Borotellurite glass composites through boron modification
SrAl2O4:Eu2+,Dy3+ represents a prototypical persistent phosphor, renowned for its pronounced green emission. However, its practical application in device integration is significantly limited by inadequate thermal stability and pronounced vulnerability to degradation under certain environmental conditions. Embedding such phosphors into optimized glass matrices offers a strategy to preserve luminescence while enabling structural stability. In this work, SrAl2O4:Eu2+,Dy3+ phosphor was incorporated into borotellurite (BT) glasses with varying B2O3 content to probe the interplay between glass network modification and persistent luminescence behavior. Structural analyses confirmed the retention of SrAl2O4 crystallinity while embedded in the amorphous glass. The electron microscopy analysis revealed uniform phosphor dispersion in the glass. Thermal studies showed thermal stability up to 600 °C. Optical characterization showed an increase in the bandgap from 3.60 to 3.98 eV with boron incorporation in BT glass, while the composites exhibited bandgap variations arising from matrix-induced modifications of the Eu2+ environment. Strong green emission (∼520 nm) was retained across all composites, with subtle CIE color coordinate shift. Thermoluminescence revealed trap depths of 0.65–0.98 eV, with SrAl:BT1 composite exhibiting the most favourable trap distribution and the longest afterglow lifetime (∼8000 s). These findings establish phosphor-glass composite as a powerful route to stabilize and tune SrAl-phosphor optical properties, offering a pathway toward persistent lighting, optical data storage, security markers, and advanced photonic devices.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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