未掺杂EZ-FET中非平衡体电位的证据

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-09-18 DOI:10.1016/j.sse.2025.109251

Abbas Hamzeh , Maryline Bawedin , Nada Zerhouni Abdou , Miltiadis Alepidis , Pablo Acosta-Alba , Laurent Brunet , Irina Ionica

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引用次数: 0

摘要

本文首次研究了基于绝缘体上硅的EZ-FET双栅结构在扫描后栅电压时非平衡体电位的变化。这种简化的MOSFET，具有未掺杂的源极和漏极，通常用于前后界面表征目的。由于难以立即注入生成导电层所需的载流子而引起的非平衡现象受正极的影响。根据前门的标志，可以观察到两种不同的行为。TCAD模拟证实了主要的实验趋势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evidence of out-of-equilibrium body potential in undoped EZ-FET

In this paper, we investigate for the first time the variation of out-of-equilibrium body potential during the scan of the back-gate voltage in EZ-FET double-gate structures, built on silicon-on-insulator. This simplified MOSFET, with undoped source and drain is typically used for front and back interface characterization purposes. The out of equilibrium phenomenon, induced by the difficulty to inject instantaneously the carriers needed for the conducting layer creation, is influenced by the front-gate. Two different behaviors are observed, depending on the sign of the front-gate. TCAD simulations confirm the main experimental tendencies.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.