利用太赫兹时域光谱和洛伦兹DHO模型综合研究未掺杂和0.03 wt% fe掺杂LiNbO3单晶的太赫兹响应

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Lalit Kumar , Guruvandra Singh , R. Bhatt , M. Soharab , Indranil Bhaumik , Dibakar Roy Chowdhury , Mukul Singh , Chitra Gautam , Mukesh Jewariya
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引用次数: 0

摘要

本研究全面研究了铁(Fe)掺杂对同位铌酸锂(LiNbO3)单晶在太赫兹区光学性质的影响,太赫兹区是电磁波谱中最难以捉摸的部分。铌酸锂是一种高介电性的功能光学材料,在光子学、非线性光学、电光器件等领域有着广泛的应用。未掺杂铌酸锂(LiNbO3)和0.03 wt%掺铁的LiNbO3 (Fe:LiNbO3) z切单晶在相同的条件下生长,以确保晶体质量的一致性。Czochralski技术用于生长LiNbO3和Fe:LiNbO3晶体。此外,利用拉曼光谱对生长晶体进行结构研究,以确定Fe掺杂对振动模式的影响。利用太赫兹时域光谱(THz- tds),我们系统地研究了铁掺入对太赫兹宽光谱范围内关键太赫兹参数的影响。观察结果表明,铁掺杂主要通过改变载流子动力学和太赫兹相互作用机制来显著调节其太赫兹(THz)响应。此外,利用洛伦兹阻尼谐振子(DHO)方法成功地对实验数据进行了建模。拟合结果表明,在太赫兹频率范围内,掺杂晶体和未掺杂晶体的最低振动模式E(TO1)高度控制着晶体的介电响应。这些发现为LiNbO3晶体通过过渡金属(Fe)掺杂的可调性提供了重要的见解,并为开发先进的太赫兹光子器件提供了有价值的参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comprehensive investigation of the THz response of undoped and 0.03 wt% Fe-doped LiNbO3 single crystals using THz-time domain spectroscopy and Lorentz DHO model
This study presents a comprehensive investigation into the effects of iron (Fe) doping on the optical properties of congruent lithium niobate (LiNbO3) single crystals in the THz region, which is the most elusive segment of the electromagnetic spectrum. Lithium niobate is a highly dielectric functional optical material with wide applications in photonics, nonlinear optics, and electro-optic devices. Undoped lithium niobate (LiNbO3) and 0.03 wt% iron-doped LiNbO3 (Fe:LiNbO3) z-cut single crystals in congruent composition are grown under identical conditions to ensure consistency in crystal quality. The Czochralski technique is used for growing LiNbO3 and Fe:LiNbO3 crystals. Furthermore, the as-grown crystals are subjected to structural investigations using Raman spectroscopy to determine the effect of Fe doping on vibrational modes. Utilizing the terahertz time-domain spectroscopy (THz-TDS), we systematically examine the impact of Fe incorporation on key THz parameters over a broad spectral range of terahertz. Observations indicate that Fe doping significantly modulates its terahertz (THz) response, primarily through modifications in charge carrier dynamics and THz interaction mechanisms. Moreover, the experimental data are successfully modelled using the Lorentz damped harmonic oscillator (DHO) approach. The fitting reveals that the lowest vibrational mode, E(TO1), highly governs the dielectric response of both the undoped and doped crystals in the THz frequency range. These findings provide critical insight into the tunability of LiNbO3 crystals via transition metal (Fe) doping and provide a valuable reference for the development of advanced THz photonic devices.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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