专用4kb试验车充电存储记忆退化预测方法

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-22 DOI:10.1109/TDMR.2025.3572856

S. Perrin;K. Alkema;V. Della Marca;T. Kempf;O. Paulet;M. Arteaga;M. Akbal;B. Arrazat;J. Metz;J. M. Moragues;A. Regnier;M. Bocquet;J. M. Portal

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引用次数: 0

摘要

本研究研究了在专用晶圆分裂工艺制造的4kb电荷存储存储器阵列中HCI（热载流子注入）退化的可变性。通过一组标准的实验来提取细胞受压前后的电特征。提出了一种基于主成分分析（PCA）方法的统计分析方法，以提高可靠性测试前对电池退化的理解。此外，还开发了一个图形模型来识别应力之前存储阵列中的外部细胞，以及评估整体技术收率。最后，探索了其他分类器模型，旨在提高运行可靠性测试前的外部细胞检测。

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Predictive Method of Charge Storage Memory Degradation on a Dedicated 4kb Test Vehicle

This study investigates the variability in HCI (Hot Carrier Injection) degradation within a 4 kb charge storage memory array, manufactured on a dedicated wafer split process. A standard set of experiments is conducted to extract electrical features of the cells before and after stress. A statistical analysis method, based on the Principal Component Analysis (PCA) approach, is introduced to enhance the comprehension of the cell degradation prior to reliability testing. Additionally, a graphical model is developed to identify extrinsic cells in the memory array prior to stress, as well as to assess the overall technology yield. Finally, others classifier models are explored aiming to improve extrinsic cells detection before running the reliability test.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.