{"title":"相参稀钌增强钴膜与改善热稳定性和击穿强度互连金属化","authors":"Yi-Yen Chen, Jun-Neng Zhan, Jau-Shiung Fang","doi":"10.1016/j.tsf.2025.140792","DOIUrl":null,"url":null,"abstract":"<div><div>Cobalt-ruthenium (Co(Ru)) alloy films with trace amount of Ru were synthesized on thermally oxidized silicon substrates via co-sputtering at 400 °C. Structural analyses confirmed the formation of fully miscible solid solutions in both hexagonal close-packed and face-centered cubic phases, with crystallinity significantly improved after annealing. All Co(Ru) films exhibited enhanced electrical reliability compared to pure Co, as evidenced by increased breakdown voltages. While resistivity increased slightly with higher Ru content due to solute-induced lattice distortion, the Co(Ru-1.28 at%) film achieved an optimal balance, exhibiting the lowest resistivity, excellent thermal stability, and a smooth, void-free surface after annealing at 700 °C. These findings indicate the dilute Ru incorporation as an effective strategy to enhance the structural integrity and electrical performance of Co-based thin films, highlighting Co(Ru) as a potential candidate for future interconnect applications in nanoscale semiconductor devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140792"},"PeriodicalIF":2.0000,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Phase-coherent dilute ruthenium-enhanced cobalt films with improved thermal stability and breakdown strength for interconnect metallization\",\"authors\":\"Yi-Yen Chen, Jun-Neng Zhan, Jau-Shiung Fang\",\"doi\":\"10.1016/j.tsf.2025.140792\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Cobalt-ruthenium (Co(Ru)) alloy films with trace amount of Ru were synthesized on thermally oxidized silicon substrates via co-sputtering at 400 °C. Structural analyses confirmed the formation of fully miscible solid solutions in both hexagonal close-packed and face-centered cubic phases, with crystallinity significantly improved after annealing. All Co(Ru) films exhibited enhanced electrical reliability compared to pure Co, as evidenced by increased breakdown voltages. While resistivity increased slightly with higher Ru content due to solute-induced lattice distortion, the Co(Ru-1.28 at%) film achieved an optimal balance, exhibiting the lowest resistivity, excellent thermal stability, and a smooth, void-free surface after annealing at 700 °C. These findings indicate the dilute Ru incorporation as an effective strategy to enhance the structural integrity and electrical performance of Co-based thin films, highlighting Co(Ru) as a potential candidate for future interconnect applications in nanoscale semiconductor devices.</div></div>\",\"PeriodicalId\":23182,\"journal\":{\"name\":\"Thin Solid Films\",\"volume\":\"828 \",\"pages\":\"Article 140792\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2025-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Solid Films\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0040609025001919\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609025001919","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
Phase-coherent dilute ruthenium-enhanced cobalt films with improved thermal stability and breakdown strength for interconnect metallization
Cobalt-ruthenium (Co(Ru)) alloy films with trace amount of Ru were synthesized on thermally oxidized silicon substrates via co-sputtering at 400 °C. Structural analyses confirmed the formation of fully miscible solid solutions in both hexagonal close-packed and face-centered cubic phases, with crystallinity significantly improved after annealing. All Co(Ru) films exhibited enhanced electrical reliability compared to pure Co, as evidenced by increased breakdown voltages. While resistivity increased slightly with higher Ru content due to solute-induced lattice distortion, the Co(Ru-1.28 at%) film achieved an optimal balance, exhibiting the lowest resistivity, excellent thermal stability, and a smooth, void-free surface after annealing at 700 °C. These findings indicate the dilute Ru incorporation as an effective strategy to enhance the structural integrity and electrical performance of Co-based thin films, highlighting Co(Ru) as a potential candidate for future interconnect applications in nanoscale semiconductor devices.
期刊介绍:
Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.