构建增强可见光光催化降解性能的AgI-BiVO4-AgVO3/PAN三元异质结复合材料

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-12 DOI:10.1016/j.mssp.2025.110049

Jiahui Liu , Haiou Liang , Xiaoye Fan , Jie Bai

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引用次数: 0

摘要

采用静电纺丝和水热反应法制备了AgVO3/PAN。利用离子交换法，进一步将AgVO3转化为BiVO4/AgI复合体系，构建了具有层次化结构的三元异质结AgI-BiVO4-AgVO3/PAN复合催化剂。表征分析证实，该材料表现出显著增强的可见光捕获效率。在罗丹明B光降解实验中，复合催化剂的一级动力学速率常数为0.01055 min−1，分别是单组分BiVO4/PAN、AgVO3/PAN和AgI/PAN催化体系的5.3倍、4.0倍和2.6倍。经过6次循环实验，降解率保持在80.4%，柔性纤维载体具有良好的可重复使用性。能带结构分析表明AgVO3-BiVO4-AgI之间形成了双z型载流子输运机制。这种协同作用使复合体系在可见光区域具有良好的氧化还原电位分布，从而使材料具有优越的光催化性能和普遍降解能力。

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Construction of AgI-BiVO4-AgVO3/PAN ternary heterojunction composite for enhanced visible-light photocatalytic degradation performance

The AgVO₃/PAN was fabricated using electrospinning and hydrothermal reaction process. Utilizing the ion exchange method, AgVO₃ was further transformed into a BiVO₄/AgI composite system, resulting in the construction of a ternary heterojunction AgI-BiVO₄-AgVO₃/PAN composite catalyst with a hierarchical structure. Characterization analysis confirmed that the material exhibited a significantly enhanced visible light capture efficiency. In the rhodamine B photodegradation experiment, the composite catalyst demonstrated a first-order kinetic rate constant of 0.01055 min⁻¹, which was 5.3, 4.0, and 2.6 times higher than that of the single-component BiVO₄/PAN, AgVO₃/PAN, and AgI/PAN catalytic systems, respectively. After six experimental cycles, the degradation rate remained at 80.4 %, and the flexible fiber carrier exhibited excellent reusability. Energy band structure analysis revealed the formation of a dual Z-type carrier transport mechanism between AgVO₃-BiVO₄-AgI. This synergistic effect endows the composite system with an excellent redox potential distribution in the visible light region, thereby imparting the material with superior photocatalytic performance and universal degradation capability.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.