密集OTP抗熔丝记忆的击穿后特性与不稳定性

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-29 DOI:10.1109/TDMR.2025.3574776

Mattia Rossetti;Laura Atzeni;Rita Zappa

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引用次数: 0

摘要

讨论了基于超薄二氧化硅层击穿的致密一次性可编程存储器中的不稳定现象。在编程条件下的应力过程中，细胞IV的特性在准线性和高度非线性之间演化。这种不稳定性的广泛表征是作为应力持续时间和编程条件的函数进行的，以最大化击穿后电流和高于程序验证阈值的保证值。在读取周期中也观察到读电流不稳定，这与击穿路径的两个或多个状态之间的切换行为有关，而适当的电池设计已将其最小化。基于量子点接触模型对OTP电池击穿后的IV特性进行了建模。所提出的模型很好地描述了程序化细胞IV特性的特殊温度依赖性。

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Post-Breakdown IV Characteristics and Instabilities in Dense OTP Anti-Fuse Memories

Instability phenomena in dense one-time-programmable memories based on the breakdown of ultra-thin silicon dioxide layers are discussed. During stress at programming condition, cell IV characteristics are found to evolve between quasi-linear and highly non-linear characteristics. Extensive characterization of this instability is carried on as a function of stress duration and programming conditions to maximize post-breakdown current and guarantee values above the program-verify threshold. Read current instability is also observed during reading cycles and associated to a switching behavior between two or more states of the breakdown path that has been minimized by a proper cell design. Post-breakdown IV characteristics of the OTP cell are modeled based on the quantum-point contact model. Peculiar temperature dependence of the IV characteristics of programmed cells is nicely described by the proposed model.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.