基于自适应热模型的卡尔曼滤波方法用于SiC MOSFET结温在线估计

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-15 DOI:10.1109/TDMR.2025.3570281

Zehua Fu;Wei Wu;Yong Chen;Zhangyong Chen;Xin Tong;Lehan Xu

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引用次数: 0

摘要

结温（T_{j}）的估计对SiC MOSFET的健康状态和可靠工作至关重要。热敏电参数（TSEP）法由于测量条件的原因会影响估计结果的准确性，而热模型法由于SiC MOSFET的老化效应会导致估计结果偏差较大。本文提出了一种基于自适应热模型的卡尔曼滤波方法，用于SiC MOSFET的在线$T_{j}$估计。该方法提出了器件老化后更新热模型的原理，并通过持续更新热模型实时校正SiC MOSFET因老化引起的模型参数变化，最后结合TSEP方法和卡尔曼滤波估计$T_{j}$。该方法不仅具有TSEP法和热模型法的优点，而且可以监测器件的老化情况，消除测量过程和热模型不准确产生的估计误差，有效提高在线$T_{j}$估计的精度和可靠性。实验结果验证了该方法的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Kalman Filter Method Based on Adaptive Thermal Model for Online Junction Temperature Estimation of SiC MOSFET

Junction temperature

$(T_{j})$

estimation is critical for the health status and reliable operation of SiC MOSFET. Thermal sensitivity electrical parameter (TSEP) method will affect the accuracy of the estimation results due to the measurement conditions, while thermal model method can cause large deviation in the estimation results due to the aging effect of SiC MOSFET. In this paper, a Kalman filter method based on adaptive thermal model is proposed for online

$T_{j}$

estimation of SiC MOSFET. This method proposes the principle of updating the thermal model after device aging, and corrects the model parameter change of SiC MOSFET due to aging in real time by continuously updating the thermal model, and then estimates

$T_{j}$

by combining the TSEP method and the Kalman filter finally. The method not only has the advantages of the TSEP method and the thermal model method, but also can monitor the aging of the device, eliminate the estimation errors generated by the measurement process and inaccurate thermal model, and effectively improve the accuracy and reliability of the online

$T_{j}$

estimation. The experimental results verify the effectiveness of the proposed method.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.