Low Temperature HfO₂ Interface Engineering in Dual-Gate and Gate-All-Around MoS₂ Transistors

This paper introduces the deposition of seed layers using a soaking technique to deposit dielectric layers on transition metal dichalcogenides (TMDs). This method addresses the bottleneck caused by the lack of dangling bonds in two-dimensional materials, which hinders the adsorption of precursors during the ALD process. We utilize the Hafnium soak technique, which can facilitate depositing a gate dielectric onto TMDs exhibiting smooth film characteristics and outstanding physical properties. We fabricate dual-gate devices using TMDs with an equivalent oxide thickness (EOT) of 1 nm and a subthreshold swing (S.S.) of 94 mV/dec. Additionally, the soaking technique promotes growth on both the top and back sides of two-dimensional materials, facilitating the development of gate-all-around (GAA) field-effect transistors.