评估工艺和设计变化对互补场效应管可靠性的影响

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-30 DOI:10.1016/j.sse.2025.109226

Ankit Dixit , Sandeep Kumar , Naveen Kumar , Deven H. Patil , S. Dasgupta , Navjeet Bagga , Luiz Felipe Aguinsky , Vihar Georgiev

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引用次数: 0

摘要

本文综合分析了互补场效应管的可靠性问题，重点考虑了设计参数和变异性效应。通过校准良好的TCAD模型，广泛研究了随机掺杂分布（RDD）、线边缘粗糙度（LER）和金属栅粒度（MGG）等过程引起的变量的影响。采用基于变化感知紧凑模型的统计分析方法对100个随机设备样本进行了分析，发现IDS-VGS曲线（传输特性）存在显著的扩散。在n型和p型器件上分析了基于晶粒尺寸和翅片宽度的电性能。因此，阈值电压（Vth）的变化可以用来预测器件的早期老化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Assessing the impact of process and design variations on reliability of complementary FET

This paper comprehensively analyzes the reliability concerns of the Complementary FET (CFET), engrossing the design parameters and the variability effects. The impact of process-induced variabilities, such as random dopant distribution (RDD), line edge roughness (LER), and metal gate granularity (MGG), is extensively studied through well-calibrated TCAD models. Variation aware compact model based statistical analysis is used to analyze 100 random device samples, which shows a significant spread in the I_DS-V_GS curve (transfer characteristics). Electrical performance based on the grain size and fin width is also analyzed on both n and p-type device. Therefore, the variation in threshold voltage (V_th) is used to predict the early aging of the devices.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.