利用MOS电容控制不同布局风格的PIN二极管结构提高太阳能电池的电性能

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-23 DOI:10.1016/j.sse.2025.109217

Fernando Pizzo Ribeiro, Egon H.S. Galembeck, Salvador Pinillos Gimenez

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引用次数: 0

摘要

在本研究中，提出了一种创新的太阳能电池（SC）设计，并使用Sentaurus Technology计算机辅助设计（TCAD）模拟器进行了分析。与传统的矩形建筑不同，引入了半圆几何形状，以改善光吸收并提高电气性能。该仿真框架模拟了太阳能电池在标准测试条件下的行为，结合了真实的材料特性和分层结构。关键电气性能指标，填充系数（FF）和转换效率进行评估。结果表明，半圆结构的能量转换效率为15.33%，FF为74.2%。这项工作为未来的实验验证奠定了基础，并鼓励对替代几何形状的研究，以进一步提高光伏器件的性能。

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Boosting the electrical performance of solar cells by using PIN diode structure with different layout styles controlled by MOS capacitor

In this study, an innovative solar cell (SC) design is proposed and analyzed using the Sentaurus Technology Computer-Aided Design (TCAD) simulator. Departing from conventional rectangular architecture, a half-circular geometry is introduced to improve light absorption and enhance electrical performance. The simulation framework models the solar cell’s behavior under standard test conditions, incorporating realistic material properties and stratified layer structures. Key electrical performance metrics, Fill Factor (FF), and conversion Efficiency are evaluated. The results demonstrate that the half-circular configuration achieves an energy conversion efficiency of 15.33 %, and an FF of 74.2 %. This work lays the groundwork for future experimental validation and encourages the investigation of alternative geometries to improve photovoltaic device performance further.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.