台面隔离SOI mosfet的非均匀匹配性能

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-26 DOI:10.1016/j.sse.2025.109224

Pierre Lhéritier , Daphnée Bosch , Giovanni Romano , Fabienne Ponthenier , Sylvain Joblot , Joris Lacord

{"title":"台面隔离SOI mosfet的非均匀匹配性能","authors":"Pierre Lhéritier , Daphnée Bosch , Giovanni Romano , Fabienne Ponthenier , Sylvain Joblot , Joris Lacord","doi":"10.1016/j.sse.2025.109224","DOIUrl":null,"url":null,"abstract":"<div><div>This work studies the threshold voltage mismatch of mesa-isolated SOI pMOSFETs through a breakdown between edge and center contributions. Pelgrom’s law is followed if a proper care is taken in the Vt extraction method. Applied to pMOS devices we observed that despite its parasitic nature, the edge transistor mismatch is as good as that of the center, regardless of channel doping and back-gate bias. Mismatch degradation in reverse back-bias mode is observed and attributed to the presence of floating body effects.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"230 ","pages":"Article 109224"},"PeriodicalIF":1.4000,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-uniform matching performances in mesa-isolated SOI MOSFETs\",\"authors\":\"Pierre Lhéritier , Daphnée Bosch , Giovanni Romano , Fabienne Ponthenier , Sylvain Joblot , Joris Lacord\",\"doi\":\"10.1016/j.sse.2025.109224\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This work studies the threshold voltage mismatch of mesa-isolated SOI pMOSFETs through a breakdown between edge and center contributions. Pelgrom’s law is followed if a proper care is taken in the Vt extraction method. Applied to pMOS devices we observed that despite its parasitic nature, the edge transistor mismatch is as good as that of the center, regardless of channel doping and back-gate bias. Mismatch degradation in reverse back-bias mode is observed and attributed to the presence of floating body effects.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"230 \",\"pages\":\"Article 109224\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125001698\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001698","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本工作通过边缘和中心贡献击穿研究了台面隔离SOI pmosfet的阈值电压失配。如果在Vt提取方法中采取适当的措施，则遵循Pelgrom定律。应用于pMOS器件，我们观察到尽管其寄生性质，但无论通道掺杂和后门偏置如何，边缘晶体管的失配与中心晶体管的失配一样好。在反向偏置模式下观察到失配退化，并归因于浮体效应的存在。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Non-uniform matching performances in mesa-isolated SOI MOSFETs

This work studies the threshold voltage mismatch of mesa-isolated SOI pMOSFETs through a breakdown between edge and center contributions. Pelgrom’s law is followed if a proper care is taken in the Vt extraction method. Applied to pMOS devices we observed that despite its parasitic nature, the edge transistor mismatch is as good as that of the center, regardless of channel doping and back-gate bias. Mismatch degradation in reverse back-bias mode is observed and attributed to the presence of floating body effects.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.