背偏对超薄SOI器件串联电阻的影响

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-30 DOI:10.1016/j.sse.2025.109225

Yu Yan , Cunhua Dou , Xuan Zhang , Weijia Song , Zhiyu Tang , Binhong Li , Jing Wan , Huabin Sun , Xing Zhao , Yun Wang , Yong Xu , Sorin Cristoloveanu

{"title":"背偏对超薄SOI器件串联电阻的影响","authors":"Yu Yan , Cunhua Dou , Xuan Zhang , Weijia Song , Zhiyu Tang , Binhong Li , Jing Wan , Huabin Sun , Xing Zhao , Yun Wang , Yong Xu , Sorin Cristoloveanu","doi":"10.1016/j.sse.2025.109225","DOIUrl":null,"url":null,"abstract":"<div><div>The universal burden of series resistance in short-channel MOSFETs is even more critical in ultrathin transistors where the sheet resistance of source and drain terminals is high. However, FD-SOI devices benefit from the back-gate action which can also modulate the series resistance. Several methods for series resistance extraction are examined. Unlike an advanced FD-SOI MOSFET with highly-doped raised terminals, the junctionless transistors (with either conventional or core–shell architecture) exhibit higher series resistance, strongly dependent on back-gate voltage.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"230 ","pages":"Article 109225"},"PeriodicalIF":1.4000,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of back-biasing on the series resistance in ultrathin SOI devices\",\"authors\":\"Yu Yan , Cunhua Dou , Xuan Zhang , Weijia Song , Zhiyu Tang , Binhong Li , Jing Wan , Huabin Sun , Xing Zhao , Yun Wang , Yong Xu , Sorin Cristoloveanu\",\"doi\":\"10.1016/j.sse.2025.109225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The universal burden of series resistance in short-channel MOSFETs is even more critical in ultrathin transistors where the sheet resistance of source and drain terminals is high. However, FD-SOI devices benefit from the back-gate action which can also modulate the series resistance. Several methods for series resistance extraction are examined. Unlike an advanced FD-SOI MOSFET with highly-doped raised terminals, the junctionless transistors (with either conventional or core–shell architecture) exhibit higher series resistance, strongly dependent on back-gate voltage.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"230 \",\"pages\":\"Article 109225\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125001704\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001704","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

短沟道mosfet中串联电阻的普遍负担在超薄晶体管中更为严重，因为超薄晶体管的源极和漏极的片电阻很高。然而，FD-SOI器件受益于后门作用，它也可以调制串联电阻。介绍了几种串联电阻提取方法。与具有高掺杂凸起端子的先进FD-SOI MOSFET不同，无结晶体管（具有传统或核壳结构）具有更高的串联电阻，强烈依赖于反向电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Impact of back-biasing on the series resistance in ultrathin SOI devices

The universal burden of series resistance in short-channel MOSFETs is even more critical in ultrathin transistors where the sheet resistance of source and drain terminals is high. However, FD-SOI devices benefit from the back-gate action which can also modulate the series resistance. Several methods for series resistance extraction are examined. Unlike an advanced FD-SOI MOSFET with highly-doped raised terminals, the junctionless transistors (with either conventional or core–shell architecture) exhibit higher series resistance, strongly dependent on back-gate voltage.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.