基于单片集成技术的6773 PPI gan蓝色微型led显示屏

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-06-30 DOI:10.1109/LED.2025.3584085

Yongzhou Zhao;Qi Wang;Zheng Qin;Feifan Ma;Haihui Xin;Kaiyi Wu;Xiuheng Zhou;Guangchao Dai;Liangyu Xu;Xin Zheng;Tian Tang;Xiaofeng Chen;Likai Xun;Yongxing Liu;Liang Tian;Yi Huang;Hongsheng Zhang

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引用次数: 0

摘要

本研究采用单片集成技术制造Micro-LED显示器件，该器件呈现0.12英寸，${640}×{480}$蓝色有源矩阵显示，具有6773像素/英寸（PPI）的超高像素密度，像素尺寸为$1.80~\mu $ m，像素间距为$3.75~\mu $ m。该信函详细讨论了制造工艺和所采用的独特设计方法。我们的Micro-LED显示屏在2 a /cm2下的亮度均匀性为76.00%，在全负载条件下，在3 a /cm2下的最大亮度为18,720单位。这些结果证明了Micro-LED技术在高分辨率近眼显示应用中的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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6773 PPI GaN-Based Blue Micro-LED Displays Fabricated by Monolithic Integration Technology

This study employs monolithic integration technology to fabricate Micro-LED display devices, which present a 0.12-inch,

${640}\times {480}$

blue active-matrix display with an ultra-high pixel density of 6773 pixels per inch (PPI), featuring a pixel size of

$1.80~\mu $

m and a pixel pitch of

$3.75~\mu $

m. The letter provides a detailed discussion of the fabrication process and the unique design approach used. Our Micro-LED display exhibits a luminance uniformity of 76.00% at 2 A/cm2 and achieves a maximum brightness of 18,720 nits at 3 A/cm2 under full-load conditions. These results demonstrate the tremendous potential of Micro-LED technology for high-resolution near-eye display applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.