硼掺入对Al1-xScxN薄膜铁电电容器跨温泄漏的抑制作用

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-10 DOI:10.1109/LED.2025.3587950

Pedram Yousefian;Xiaolei Tong;Jonathan Tan;Dhiren K. Pradhan;Deep Jariwala;Roy H. Olsson

{"title":"硼掺入对Al1-xScxN薄膜铁电电容器跨温泄漏的抑制作用","authors":"Pedram Yousefian;Xiaolei Tong;Jonathan Tan;Dhiren K. Pradhan;Deep Jariwala;Roy H. Olsson","doi":"10.1109/LED.2025.3587950","DOIUrl":null,"url":null,"abstract":"This letter presents high-temperature ferroelectric characterization of 40 nm <inline-formula> <tex-math>${\\mathrm {Al}}_{\\text {1-x-y}}$ </tex-math></inline-formula>BxScyN (AlBScN) thin film capacitors grown by co-sputtering Al0.89B0.11 and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37 nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600° C, exhibited a linear decrease in coercive fields from 6.2 MV/cm at room temperature to 4.2 MV/cm at 600°C, while remanent polarization remained stable with temperature. Direct current I–V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1545-1548"},"PeriodicalIF":4.5000,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors Through Boron Incorporation\",\"authors\":\"Pedram Yousefian;Xiaolei Tong;Jonathan Tan;Dhiren K. Pradhan;Deep Jariwala;Roy H. Olsson\",\"doi\":\"10.1109/LED.2025.3587950\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents high-temperature ferroelectric characterization of 40 nm <inline-formula> <tex-math>${\\\\mathrm {Al}}_{\\\\text {1-x-y}}$ </tex-math></inline-formula>BxScyN (AlBScN) thin film capacitors grown by co-sputtering Al0.89B0.11 and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37 nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600° C, exhibited a linear decrease in coercive fields from 6.2 MV/cm at room temperature to 4.2 MV/cm at 600°C, while remanent polarization remained stable with temperature. Direct current I–V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"46 9\",\"pages\":\"1545-1548\"},\"PeriodicalIF\":4.5000,\"publicationDate\":\"2025-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11077408/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11077408/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了在Pt(111)/Ti(002)/Si（100）衬底上共溅射Al0.89B0.11和Sc靶材生长的40 nm ${\ mathm {Al}}_{\text {1-x-y}}$ BxScyN （AlBScN）薄膜电容器的高温铁电特性。结构分析证实为c轴取向纤锌矿结构，表面粗糙度低，为1.37 nm。铁电开关在600°C的温度下具有正向上负向下（PUND）测量特征，其矫顽力场从室温下的6.2 MV/cm线性降低到600°C时的4.2 MV/cm，而剩余极化随温度保持稳定。直流I-V测量突出了泄漏电流的显著抑制，与在类似条件下制造的AlScN电容器相比，泄漏电流降低了两个数量级以上。这些结果使alscn薄膜成为极端环境下铁电应用的有力候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors Through Boron Incorporation

This letter presents high-temperature ferroelectric characterization of 40 nm

${\mathrm {Al}}_{\text {1-x-y}}$

BxScyN (AlBScN) thin film capacitors grown by co-sputtering Al0.89B0.11 and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37 nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600° C, exhibited a linear decrease in coercive fields from 6.2 MV/cm at room temperature to 4.2 MV/cm at 600°C, while remanent polarization remained stable with temperature. Direct current I–V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.