基于量子阱异质结光电晶体管的4对2光电编码器

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-16 DOI:10.1109/LED.2025.3589891

Mukul Kumar;Shu-Jui Hsu;Yun-Jie Huang;Lucas Yang;Sung-Pu Yang;Natchanon Prechatavanich;Jia-Zhen Cai;Chao-Hsin Wu

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引用次数: 0

摘要

这封信介绍了利用发光晶体管（let）平台的4对2光电编码器的设计，制造和特性。通过采用基于gaas的异质结结构和InGaAs量子阱（QW）， LET结构显著增强了发光能力，实现了高效的光电信号转换。这标志着基于let的编码器电路的首次成功演示，推进了光接收器应用的单片集成，并为高性能光电系统的发展做出了贡献。这项工作突出了let作为可扩展和高效光子集成电路的通用平台的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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4-to-2 Optoelectronic Encoders Utilizing Quantum Well Heterojunction Phototransistors on the Light-Emitting Transistor Platform

This letter presents the design, fabrication, and characterization of a 4-to-2 optoelectronic encoder utilizing the light-emitting transistors (LETs) platform. By employing a GaAs-based heterojunction structure with an InGaAs quantum well (QW), the LET architecture significantly enhances light emitting, enabling efficient optical-to-electrical signal conversion. This marks the first successful demonstration of an LET-based encoder circuit, advancing monolithic integration for optical receiver applications and contributing to the development of high-performance optoelectronic systems. This work highlights the potential of LETs as a versatile platform for scalable and efficient photonic integrated circuits.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.