iii -氮化物光电系统的光载流子驱动无源调制

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-06-30 DOI:10.1109/LED.2025.3584290

Hao Zhang;Ziqi Ye;Meixin Feng;Qian Sun;Yongjin Wang

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引用次数: 0

摘要

这封信提出了一项基于悬浮iii -氮化物多量子阱（MQW）光电系统中光生载流子浓度变化的无源调制的研究。MQW结构在440nm处呈现出电致发光峰，片上平台将发射器、波导、调制器和接收器集成在一个单片配置中。这些器件是在一个统一的过程中设计和制造的，使用自上而下的蚀刻和背面悬浮技术，从单一的硅基iii -氮化物晶圆。对悬浮微系统进行了全面表征。实验结果表明，无源调制系统在- 50℃~ 50℃的温度范围内保持稳定工作，连续工作300分钟。调制速率可达2mbps。这种调制方案的特点是它不依赖于外部施加的电场或驱动电流，使其成为未来iii -氮化物光电系统中超低功耗调制的有希望的候选方案。

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Photocarrier-Driven Passive Modulation for III-Nitride Optoelectronic System

This letter presents an investigation of passive modulation based on photogenerated carrier concentration variation in a suspended III-nitride multiple-quantum-well (MQW) optoelectronic system. The MQW structure exhibits an electroluminescence peak at 440 nm, and the on-chip platform integrates the transmitter, waveguide, modulator, and receiver in a monolithic configuration. These devices are designed and fabricated in a unified process using top-down etching and backside suspension techniques from a single silicon-based III-nitride wafer. The suspended microsystem is comprehensively characterized. Experimental results show that the passive modulation system maintains stable operation over a temperature range of - 50°C to 50°C and continuous operation for 300 minutes. A modulation rate of up to 2 Mbps is achieved. This modulation scheme is distinguished by its independence from externally applied electric fields or driving currents, making it a promising candidate for ultra-low-power modulation in future III-nitride optoelectronic systems.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.