顶接触五苯有机薄膜晶体管源电阻的测量方法

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-07-16 DOI:10.1109/TED.2025.3588145

Umang Singh;Hitesh Kumar;Ram Krishna Dewangan;Abhishek Kumar Verma;Somendra Kumar Soni;Vinay Kumar Singh

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引用次数: 0

摘要

本文采用与源触点平行的另一个触点直接测量了顶接触底栅极（TCBG）有机薄膜晶体管（OTFT）的源电阻。三维数值模拟验证了该方法的有效性。采用并五苯为活性层，聚4-乙烯基苯酚（PVP）为介电层的TCBG OTFT计算源电阻。通过阴影掩膜沉积金，制备OTFT和触点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Method for Measurement of Source Resistance of Top-Contact Pentacene Organic Thin-Film Transistors

In this article, the source resistance of top-contact bottom gate (TCBG) organic thin-film transistor (OTFT) was directly measured using another contact parallel to source contact. Three-dimensional numerical simulation was used to validate the proposed method. TCBG OTFT with pentacene as active layer and poly(4-vinyl phenol) (PVP) as dielectric layer was used to calculate the source resistance. Gold was deposited through shadow mask to fabricate OTFT and contacts.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.