PECVD氧化硅阻性开关层RRAM器件的研究

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-13 DOI:10.1016/j.sse.2025.109208

Ivan Lisovyi , Bartłomiej Stonio , Jakub Jasiński , Piotr Wiśniewski

{"title":"PECVD氧化硅阻性开关层RRAM器件的研究","authors":"Ivan Lisovyi , Bartłomiej Stonio , Jakub Jasiński , Piotr Wiśniewski","doi":"10.1016/j.sse.2025.109208","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we study the RRAM devices with PECVD silicon-oxide layer in a Al(Ni)/SiO<sub>x</sub>/Cr structure. We perform the electrical characterization, analyze the extracted parameters in HRS and LRS states. Statistical distribution of the extracted parameters were also presented and analyzed. Transport mechanisms for different voltage range and device states were identified. Low-temperature process used to fabricate the presented devices is advantageous due to the possibility of BEOL integration.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109208"},"PeriodicalIF":1.4000,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of RRAM devices with PECVD silicon-oxide resistive switching layer\",\"authors\":\"Ivan Lisovyi , Bartłomiej Stonio , Jakub Jasiński , Piotr Wiśniewski\",\"doi\":\"10.1016/j.sse.2025.109208\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, we study the RRAM devices with PECVD silicon-oxide layer in a Al(Ni)/SiO<sub>x</sub>/Cr structure. We perform the electrical characterization, analyze the extracted parameters in HRS and LRS states. Statistical distribution of the extracted parameters were also presented and analyzed. Transport mechanisms for different voltage range and device states were identified. Low-temperature process used to fabricate the presented devices is advantageous due to the possibility of BEOL integration.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"229 \",\"pages\":\"Article 109208\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125001534\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001534","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了Al(Ni)/SiOx/Cr结构的PECVD氧化硅层RRAM器件。我们进行了电学表征，分析了在HRS和LRS状态下提取的参数。给出并分析了提取参数的统计分布。确定了不同电压范围和器件状态下的输运机制。由于BEOL集成的可能性，使用低温工艺制造所提出的器件是有利的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Study of RRAM devices with PECVD silicon-oxide resistive switching layer

In this work, we study the RRAM devices with PECVD silicon-oxide layer in a Al(Ni)/SiO_x/Cr structure. We perform the electrical characterization, analyze the extracted parameters in HRS and LRS states. Statistical distribution of the extracted parameters were also presented and analyzed. Transport mechanisms for different voltage range and device states were identified. Low-temperature process used to fabricate the presented devices is advantageous due to the possibility of BEOL integration.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.