用于非平面场效应管的增强型多子带蒙特卡罗模拟器

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-23 DOI:10.1016/j.sse.2025.109213

L. Donetti, C. Medina-Bailon, J.L. Padilla, C. Sampedro, F. Gamiz

{"title":"用于非平面场效应管的增强型多子带蒙特卡罗模拟器","authors":"L. Donetti, C. Medina-Bailon, J.L. Padilla, C. Sampedro, F. Gamiz","doi":"10.1016/j.sse.2025.109213","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we present <span>Mulhacen</span>, a 3D multi-subband simulator developed for the accurate study of nonplanar devices which are at the core of present and future technology nodes. It allows to consider electrons in different conduction band valleys and, among its main features, we can highlight the accurate evaluation of quantum effects in the plane transverse to transport through the solution of the 2D Schrödinger equation in several device cross sections, as well as Monte Carlo description of transport. The simulator is based on a finite elements discretization, which allows an accurate description of realistic device geometries.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"230 ","pages":"Article 109213"},"PeriodicalIF":1.4000,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MULHACEN, enhanced multi-subband Monte Carlo simulator for nonplanar FETs\",\"authors\":\"L. Donetti, C. Medina-Bailon, J.L. Padilla, C. Sampedro, F. Gamiz\",\"doi\":\"10.1016/j.sse.2025.109213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, we present <span>Mulhacen</span>, a 3D multi-subband simulator developed for the accurate study of nonplanar devices which are at the core of present and future technology nodes. It allows to consider electrons in different conduction band valleys and, among its main features, we can highlight the accurate evaluation of quantum effects in the plane transverse to transport through the solution of the 2D Schrödinger equation in several device cross sections, as well as Monte Carlo description of transport. The simulator is based on a finite elements discretization, which allows an accurate description of realistic device geometries.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"230 \",\"pages\":\"Article 109213\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-08-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125001583\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001583","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，我们介绍了mulhazen，一个3D多子带模拟器，用于精确研究非平面器件，这些器件是当前和未来技术节点的核心。它允许考虑不同导带谷中的电子，并且在其主要特征中，我们可以突出通过在几个设备横截面中求解二维Schrödinger方程来准确评估横向平面上的量子效应，以及对传输的蒙特卡罗描述。该模拟器基于有限元离散化，可以准确描述实际的器件几何形状。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

MULHACEN, enhanced multi-subband Monte Carlo simulator for nonplanar FETs

In this work, we present Mulhacen, a 3D multi-subband simulator developed for the accurate study of nonplanar devices which are at the core of present and future technology nodes. It allows to consider electrons in different conduction band valleys and, among its main features, we can highlight the accurate evaluation of quantum effects in the plane transverse to transport through the solution of the 2D Schrödinger equation in several device cross sections, as well as Monte Carlo description of transport. The simulator is based on a finite elements discretization, which allows an accurate description of realistic device geometries.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.