基于Gr-MoS2的ds - fet设计指南

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-23 DOI:10.1016/j.sse.2025.109216

Tommaso Ugolini, Elena Gnani

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引用次数: 0

摘要

随着狄拉克源场效应晶体管（ds - fet）的发展，越来越需要一个强大、灵活和敏捷的仿真框架，能够在一系列工作条件下评估器件性能。这项工作通过将二维泊松求解器与弹道输运机制下的量子输运模型耦合来解决这一需求。利用这种仿真方法分析了石墨烯与单层MoS2异质结实现的DS-FET的电特性。此外，系统地研究了栅极-通道对准对器件性能的影响。仿真结果强调了全栅极与半导体区域重叠的关键作用，并证实了基于这两种材料的ds - fet的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design guidelines for Gr-MoS2 based DS-FETs

As the development of Dirac-Source Field-Effect Transistors (DS-FETs) progresses, there is an increasing need for a robust, flexible, and agile simulation framework capable of evaluating device performance across a range of operating conditions. This work addresses that need by coupling a two-dimensional (2D) Poisson solver with a quantum transport model under the ballistic transport regime. This simulation approach is employed to analyze the electrical characteristics of a DS-FET realized with the heterojunction of graphene and monolayer MoS

_{2}

. In addition, the impact of gate-to-channel alignment on device performance is systematically investigated. Simulation results underscore the critical role of full gate overlap with the semiconducting region and substantiate the feasibility of DS-FETs based on these two materials.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.