Youssef Moualhi , Muhammad Javed , Naeem Akbar , Hedi Rahmouni
{"title":"FeNi2O4的载流子运动起源和双介电常数行为:介电共振、epsilon-near-zero、极化效应和可能的高级电磁应用","authors":"Youssef Moualhi , Muhammad Javed , Naeem Akbar , Hedi Rahmouni","doi":"10.1016/j.mssp.2025.110000","DOIUrl":null,"url":null,"abstract":"<div><div>Negative permittivity in oxide materials can be achieved through mechanisms such as dielectric resonance or plasma oscillations, while positive permittivity typically arises from various polarization effects. In this study, a spinel nickelate with the nominal composition FeNi<sub>2</sub>O<sub>4</sub> was synthesized using the auto-combustion method. The material exhibits both positive and negative permittivity behaviors, attributed to dielectric polarization and dielectric resonance mechanisms. Notably, FeNi<sub>2</sub>O<sub>4</sub> demonstrates a tunable negative permittivity, with a maximum value of ε′ ≈ −270 observed around 10 MHz, suggesting the potential for epsilon-near-zero (ENZ) behavior. Beyond 10 MHz, FeNi<sub>2</sub>O<sub>4</sub> exhibits a Lorentz-like permittivity response, making it a promising candidate for advanced electromagnetic applications such as metamaterials and microwave absorbers. Temperature-dependent studies reveal that increasing temperature leads to changes in resonance frequency, permittivity magnitude, and a transition in negative permittivity behavior due to the combined effects of dipole resonance and free electron dynamics. To understand the electrical transport mechanisms in FeNi<sub>2</sub>O<sub>4</sub>, various conduction models are employed. DC conductivity measurements confirm semiconducting behavior, primarily governed by electronic and polaronic hopping processes. Specifically, non-adiabatic small polaron hopping is characterized by an activation energy of <em>E</em><sub><em>a</em></sub> = 1.01 eV, while Mott's variable range hopping (VRH) corresponds to a disordered energy <em>E</em><sub><em>a</em></sub> = 0.377 eV. Additionally, Shklovskii–Efros (SE)-type VRH conduction is evident, associated with the formation of a soft Coulomb gap of approximately Δ = 1.2 eV. The frequency-dependent conductivity spectra reveal that cationic interactions and material response are influenced by temperature. To analyze these behaviors, experimental data are interpreted using Bruce's model, Jonscher's universal power law, and the Summerfield scaling formalism. At high frequencies, the conductivity trends follow superlinear behavior and the nearly constant loss (NCL) regime.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 110000"},"PeriodicalIF":4.6000,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carrier motion origins and dual-permittivity behavior in FeNi2O4: Dielectric resonance, epsilon-near-zero, polarization effects, and possible advanced electromagnetic applications\",\"authors\":\"Youssef Moualhi , Muhammad Javed , Naeem Akbar , Hedi Rahmouni\",\"doi\":\"10.1016/j.mssp.2025.110000\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Negative permittivity in oxide materials can be achieved through mechanisms such as dielectric resonance or plasma oscillations, while positive permittivity typically arises from various polarization effects. In this study, a spinel nickelate with the nominal composition FeNi<sub>2</sub>O<sub>4</sub> was synthesized using the auto-combustion method. The material exhibits both positive and negative permittivity behaviors, attributed to dielectric polarization and dielectric resonance mechanisms. Notably, FeNi<sub>2</sub>O<sub>4</sub> demonstrates a tunable negative permittivity, with a maximum value of ε′ ≈ −270 observed around 10 MHz, suggesting the potential for epsilon-near-zero (ENZ) behavior. Beyond 10 MHz, FeNi<sub>2</sub>O<sub>4</sub> exhibits a Lorentz-like permittivity response, making it a promising candidate for advanced electromagnetic applications such as metamaterials and microwave absorbers. Temperature-dependent studies reveal that increasing temperature leads to changes in resonance frequency, permittivity magnitude, and a transition in negative permittivity behavior due to the combined effects of dipole resonance and free electron dynamics. To understand the electrical transport mechanisms in FeNi<sub>2</sub>O<sub>4</sub>, various conduction models are employed. DC conductivity measurements confirm semiconducting behavior, primarily governed by electronic and polaronic hopping processes. Specifically, non-adiabatic small polaron hopping is characterized by an activation energy of <em>E</em><sub><em>a</em></sub> = 1.01 eV, while Mott's variable range hopping (VRH) corresponds to a disordered energy <em>E</em><sub><em>a</em></sub> = 0.377 eV. Additionally, Shklovskii–Efros (SE)-type VRH conduction is evident, associated with the formation of a soft Coulomb gap of approximately Δ = 1.2 eV. The frequency-dependent conductivity spectra reveal that cationic interactions and material response are influenced by temperature. To analyze these behaviors, experimental data are interpreted using Bruce's model, Jonscher's universal power law, and the Summerfield scaling formalism. At high frequencies, the conductivity trends follow superlinear behavior and the nearly constant loss (NCL) regime.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"200 \",\"pages\":\"Article 110000\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125007371\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125007371","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Carrier motion origins and dual-permittivity behavior in FeNi2O4: Dielectric resonance, epsilon-near-zero, polarization effects, and possible advanced electromagnetic applications
Negative permittivity in oxide materials can be achieved through mechanisms such as dielectric resonance or plasma oscillations, while positive permittivity typically arises from various polarization effects. In this study, a spinel nickelate with the nominal composition FeNi2O4 was synthesized using the auto-combustion method. The material exhibits both positive and negative permittivity behaviors, attributed to dielectric polarization and dielectric resonance mechanisms. Notably, FeNi2O4 demonstrates a tunable negative permittivity, with a maximum value of ε′ ≈ −270 observed around 10 MHz, suggesting the potential for epsilon-near-zero (ENZ) behavior. Beyond 10 MHz, FeNi2O4 exhibits a Lorentz-like permittivity response, making it a promising candidate for advanced electromagnetic applications such as metamaterials and microwave absorbers. Temperature-dependent studies reveal that increasing temperature leads to changes in resonance frequency, permittivity magnitude, and a transition in negative permittivity behavior due to the combined effects of dipole resonance and free electron dynamics. To understand the electrical transport mechanisms in FeNi2O4, various conduction models are employed. DC conductivity measurements confirm semiconducting behavior, primarily governed by electronic and polaronic hopping processes. Specifically, non-adiabatic small polaron hopping is characterized by an activation energy of Ea = 1.01 eV, while Mott's variable range hopping (VRH) corresponds to a disordered energy Ea = 0.377 eV. Additionally, Shklovskii–Efros (SE)-type VRH conduction is evident, associated with the formation of a soft Coulomb gap of approximately Δ = 1.2 eV. The frequency-dependent conductivity spectra reveal that cationic interactions and material response are influenced by temperature. To analyze these behaviors, experimental data are interpreted using Bruce's model, Jonscher's universal power law, and the Summerfield scaling formalism. At high frequencies, the conductivity trends follow superlinear behavior and the nearly constant loss (NCL) regime.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.