Yujie Ouyang , Chunxia Li , Haoran Ge , Weixiao Lin , Tingting Su , Qiwei Tong , Jiangfan Luo , Fan Yan , Zhuo Chen , Dawen Jiang , Xisheng Yang , Yong Liu , Yan Zhao , Siqi Huo , Min Hong , Qingjie Zhang , Wei Liu , Xinfeng Tang
{"title":"三元范德华AB2X4单晶薄膜的广义外延配方","authors":"Yujie Ouyang , Chunxia Li , Haoran Ge , Weixiao Lin , Tingting Su , Qiwei Tong , Jiangfan Luo , Fan Yan , Zhuo Chen , Dawen Jiang , Xisheng Yang , Yong Liu , Yan Zhao , Siqi Huo , Min Hong , Qingjie Zhang , Wei Liu , Xinfeng Tang","doi":"10.1016/j.mtphys.2025.101834","DOIUrl":null,"url":null,"abstract":"<div><div>Two-dimensional van der Waals (vdW) ternary AB<sub>2</sub>X<sub>4</sub> thin films have shown great potential in fields such as quantum transport, thermoelectrics, phase-change memory and spintronics. However, it is challenging to fabricate high-quality, phase-pure vdW ternary AB<sub>2</sub>X<sub>4</sub> (000<em>l</em>) thin films, due to the difficulty of precise control over three elemental components and the complex growth kinetic conditions. Herein, we developed a general epitaxy recipe for engineering the growth kinetics of AB<sub>2</sub>X<sub>4</sub> (000<em>l</em>) thin films to precisely control the stoichiometry and avoid binary impurities. Taking MnSb<sub>2</sub>Te<sub>4</sub> (000<em>l</em>) as the typical example, we successfully demonstrated the fabrication of high-quality, phase-pure AB<sub>2</sub>X<sub>4</sub> (000<em>l</em>) thin films with size of 10 × 10 mm<sup>2</sup> by molecular beam epitaxy technique, achieving excellent reproducibility. The stoichiometry of MnSb<sub>2</sub>Te<sub>4</sub> thin films could be effectively controlled by rationally tuning growth parameters. Moreover, the stable growth of MnSb<sub>2</sub>Te<sub>4</sub> thin films was successfully achieved through substrate surface engineering, appropriate buffer layers, and layer-by-layer annealing processes. The established epitaxy was successfully applied to the large-area fabrication of five other AB<sub>2</sub>X<sub>4</sub> (000<em>l</em>) thin films, which lays an important foundation for the controllable fabrication and application of complex vdW ternary thin films.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"58 ","pages":"Article 101834"},"PeriodicalIF":9.7000,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A generalized epitaxy recipe for ternary van der Waals AB2X4 single crystalline thin films\",\"authors\":\"Yujie Ouyang , Chunxia Li , Haoran Ge , Weixiao Lin , Tingting Su , Qiwei Tong , Jiangfan Luo , Fan Yan , Zhuo Chen , Dawen Jiang , Xisheng Yang , Yong Liu , Yan Zhao , Siqi Huo , Min Hong , Qingjie Zhang , Wei Liu , Xinfeng Tang\",\"doi\":\"10.1016/j.mtphys.2025.101834\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Two-dimensional van der Waals (vdW) ternary AB<sub>2</sub>X<sub>4</sub> thin films have shown great potential in fields such as quantum transport, thermoelectrics, phase-change memory and spintronics. However, it is challenging to fabricate high-quality, phase-pure vdW ternary AB<sub>2</sub>X<sub>4</sub> (000<em>l</em>) thin films, due to the difficulty of precise control over three elemental components and the complex growth kinetic conditions. Herein, we developed a general epitaxy recipe for engineering the growth kinetics of AB<sub>2</sub>X<sub>4</sub> (000<em>l</em>) thin films to precisely control the stoichiometry and avoid binary impurities. Taking MnSb<sub>2</sub>Te<sub>4</sub> (000<em>l</em>) as the typical example, we successfully demonstrated the fabrication of high-quality, phase-pure AB<sub>2</sub>X<sub>4</sub> (000<em>l</em>) thin films with size of 10 × 10 mm<sup>2</sup> by molecular beam epitaxy technique, achieving excellent reproducibility. The stoichiometry of MnSb<sub>2</sub>Te<sub>4</sub> thin films could be effectively controlled by rationally tuning growth parameters. Moreover, the stable growth of MnSb<sub>2</sub>Te<sub>4</sub> thin films was successfully achieved through substrate surface engineering, appropriate buffer layers, and layer-by-layer annealing processes. The established epitaxy was successfully applied to the large-area fabrication of five other AB<sub>2</sub>X<sub>4</sub> (000<em>l</em>) thin films, which lays an important foundation for the controllable fabrication and application of complex vdW ternary thin films.</div></div>\",\"PeriodicalId\":18253,\"journal\":{\"name\":\"Materials Today Physics\",\"volume\":\"58 \",\"pages\":\"Article 101834\"},\"PeriodicalIF\":9.7000,\"publicationDate\":\"2025-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Physics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2542529325001907\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2542529325001907","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
A generalized epitaxy recipe for ternary van der Waals AB2X4 single crystalline thin films
Two-dimensional van der Waals (vdW) ternary AB2X4 thin films have shown great potential in fields such as quantum transport, thermoelectrics, phase-change memory and spintronics. However, it is challenging to fabricate high-quality, phase-pure vdW ternary AB2X4 (000l) thin films, due to the difficulty of precise control over three elemental components and the complex growth kinetic conditions. Herein, we developed a general epitaxy recipe for engineering the growth kinetics of AB2X4 (000l) thin films to precisely control the stoichiometry and avoid binary impurities. Taking MnSb2Te4 (000l) as the typical example, we successfully demonstrated the fabrication of high-quality, phase-pure AB2X4 (000l) thin films with size of 10 × 10 mm2 by molecular beam epitaxy technique, achieving excellent reproducibility. The stoichiometry of MnSb2Te4 thin films could be effectively controlled by rationally tuning growth parameters. Moreover, the stable growth of MnSb2Te4 thin films was successfully achieved through substrate surface engineering, appropriate buffer layers, and layer-by-layer annealing processes. The established epitaxy was successfully applied to the large-area fabrication of five other AB2X4 (000l) thin films, which lays an important foundation for the controllable fabrication and application of complex vdW ternary thin films.
期刊介绍:
Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.